Super Fast Surface Mount Rectifiers US2AA-US2MA Features Glass Passivated Chip Junction www.onsemi.com High Surge Capacity Low Forward Voltage Drop Fast Switching with Reverse Recovery Time: 5075 ns Maximum UL Flammability 94 V 0 Classification 1 2 MSL 1 per JSTD020 Cathode Anode RoHS Compliant / Green Molding Compound NRV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* 2 Table 1. ORDERING INFORMATION SMA/DO214AC Packing COLOR BAND DENOTES CATHODE Part Number Top Mark Package Method US2AA, US2AA DO214AC (SMA) Tape and Reel NRVUS2AA* MARKING DIAGRAM US2BA, US2BA DO214AC (SMA) Tape and Reel NRVUS2BA* US2DA, US2DA DO214AC (SMA) Tape and Reel Y&Z&3 NRVUS2DA* US2XA US2FA, US2FA DO214AC (SMA) Tape and Reel NRVUS2FA* US2GA, US2GA DO214AC (SMA) Tape and Reel NRVUS2GA* Y = ON Semiconductor Logo &Z = Assembly Plant Code US2JA, US2JA DO214AC (SMA) Tape and Reel &3 = Data Code (Year & Week) NRVUS2JA* US2XA = Specific Device Code US2KA, US2KA DO214AC (SMA) Tape and Reel X = A/B/D/F/G/J/K/M NRVUS2KA* US2MA, US2MA DO214AC (SMA) Tape and Reel NRVUS2MA* Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: February, 2021 Rev. 4 US2AA/DUS2AAUS2MA Table 2. ABSOLUTE MAXIMUM RATINGS US2 US2 US2 US2 US2 US2 US2 US2 AA BA DA FA GA JA KA MA Symbol Parameter Unit V Repetitive Peak Reverse Voltage 50 100 200 300 400 600 800 1000 V RRM V RMS Reverse Voltage 35 70 140 210 280 420 560 700 V RMS V DC Blocking Voltage 50 100 200 300 400 600 800 1000 V DC I Average Forward Rectified Current 1.5 A F(AV) I Peak Forward Surge Current, 50 A FSM 8.3 ms Single HalfSine Wave, Superimposed on Rated Load T Operating Junction Temperature Range 55 to +150 C J T Storage Temperature Range 55 to +150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. THERMAL CHARACTERISTICS (NOTE 1) (Values are at T = 25C unless otherwise noted) A Symbol Parameter Value Unit R Typical Thermal Resistance, JunctiontoAmbient 189 C/W JA Typical Thermal Characteristics, JunctiontoLead (with Reference to Cathode Pin) 31 C/W JL 1. Device mounted at minimum pad. Table 4. ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted) A Value US2 US2 US2 US2 US2 US2 US2 US2 AA BA DA FA GA JA KA MA Symbol Parameter Unit V Maximum Instantaneous Forward Voltage (Note2) 1.0 1.3 1.7 V F at Rated I F(AV) I Maximum Re- TJ = 25C 5 A R verse Current TJ = 125C 100 at Rated V R t Maximum Reverse Recovery Time (Note 3) 50 75 ns rr C Typical Junction Capacitance (Note 4) 50 30 pF J 2. Pulse test with PW = 300 s, 1% duty cycle 3. Reverse recovery test conditions: I = 0.5 A, I = 1.0 A, I = 0.25 A F R RR 4. Measured at 1 Mhz and applied reverse voltage of 4.0 V D.C. www.onsemi.com 2