Product Information

Z0107MNT1G

Z0107MNT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Triacs SENSITIVE GATE TRIAC

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6313 ea
Line Total: USD 0.63

615 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
615 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

Z0107MNT1G
ON Semiconductor

1 : USD 0.6313
10 : USD 0.5566
100 : USD 0.3634
500 : USD 0.3369
1000 : USD 0.2944
2000 : USD 0.2679
5000 : USD 0.2599
10000 : USD 0.2541
25000 : USD 0.2495

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Thyristors Surface Mount 600V > Z0103MN, Z0107MN, Z0109MN Pb Z0103MN, Z0107MN, Z0109MN Description Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. Features Sensitive Gate Trigger Surface Mount Package Current in Four Trigger These are PbFree Modes Devices Blocking Voltage to 600 V Glass Passivated Surface for Reliability and Uniformity Pin Out Functional Diagram 4 MT 2 MT 1 G 1 2 3 Additional Information Samples Datasheet Resources 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/26/19Thyristors Surface Mount 600V > Z0103MN, Z0107MN, Z0109MN Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) V , DRM V (R = I , T 40 to +125C, Sine Wave, 50 to 60 Hz) V 600 GK K J RRM On-State RMS Current (Full Sine Wave 50 to 60 Hz T = 80C) I 1.0 A C T (RMS) Peak Nonrepetitive Surge Current I 8.0 A T (RMS) (One Full Cycle Sine Wave, 60 Hz, T = 25C) C 2 Circuit Fusing Considerations (t = 8.3 ms) I t 0.4 A2s Average Gate Power (T = 80C, t 8.3 ms) P 1.0 W C G(AV) Peak Gate Current (t 20 s, T = +125C) I 1.0 A J GM Operating Junction Temperature Range Rated V and V T -40 to +110 C RRM DRM J Storage Temperature Range T -40 to +150 C stg Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, JunctiontoAmbient PCB Mounted per Figure 1 R 156 C/W 8JA Thermal Resistance, JunctiontoTab Measured on MT2 Tab Adjacent R 25 C/W 8JT to Epoxy Maximum Device Temperature for Soldering Purposes for T 260 C L 10 Secs Maximum Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Electrical Characteristics - OFF (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit T = 25C - - 5.0 Peak Repetitive Forward or Reverse Blocking Current (Note 3) J I , A DRM (V = Rated V or V , R = 1000 kQ AK DRM RRM GK T = 125C - - 500 J 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/26/19

Tariff Desc

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ON SEMICONDUCTOR
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