AXUV576C Opto Diode

From Deep UV to Mid-IR 2 AXUV576C Electron Detection 576 mm An ITW Company FEATURES Square Active Area Round 4-Pin Package Ideal for Electron Detection Electro-Optical Characteristics at 25 C Parameters Test Conditions Min Typ Max Units 2 Active Area 24.01 mm x 24.01 mm 576.5 mm Responsivity (see graphs on next page) Shunt Resistance, Rsh 10 mV 5 50 Reverse Breakdown Voltage, V I = 1 A 5 Volts R R Capacitance, C V = 0 V 5 15 nF R Rise Time, tr V = 10 V, R = 50 50 usec R L Thermal Parameters Units Storage and Operating Temperature Range 1 Ambient -10 to 40C Nitrogen or Vacuum -20C to 80C 2 Lead Soldering Temperature 260C 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150 nm will be compromised. 2 0.080 from case for 10 seconds. Revision November 26, 2019 Page 1 of 4 From Deep UV to Mid-IR 2 AXUV576C Electron Detection 576 mm An ITW Company Typical Electron Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) Typical EUV-UV Photon Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 50 100 150 200 250 WAVELENGTH (nm) Typical UV-VIS-NIR Photon Responsivity 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) Revision November 26, 2019 Page 2 of 4 RESPONSIVITY (A/W) RESPONSIVITY (A/W) RESPONSIVITY (A/W)