X-On Electronics has gained recognition as a prominent supplier of BP 104 FAS-Z Photodiodes across the USA, India, Europe, Australia, and various other global locations. BP 104 FAS-Z Photodiodes are a product manufactured by OSRAM. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

BP 104 FAS-Z OSRAM

BP 104 FAS-Z electronic component of OSRAM
BP 104 FAS-Z OSRAM
BP 104 FAS-Z Photodiodes
BP 104 FAS-Z  Optoelectronics

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See Product Specifications
Part No. BP 104 FAS-Z
Manufacturer: OSRAM
Category: Photodiodes
Description: Photodiodes PHOTODIODE, SMT
Datasheet: BP 104 FAS-Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1232 ea
Line Total: USD 1.12 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 3000
Multiples : 1500
3000 : USD 21.2233

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 1
Multiples : 1
1 : USD 0.882
10 : USD 0.5496
100 : USD 0.3603

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 1
Multiples : 1
1 : USD 0.882
10 : USD 0.5496
100 : USD 0.3603

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 1500
Multiples : 1500
1500 : USD 0.2963
3000 : USD 0.2655
7500 : USD 0.256
10500 : USD 0.2523

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.3689

0
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 1.1232
10 : USD 0.7707
100 : USD 0.5339
500 : USD 0.4556
1000 : USD 0.4203
1500 : USD 0.4022
3000 : USD 0.3851
9000 : USD 0.3704
24000 : USD 0.3704

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Package / Case
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Dark Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Forward Current
Power Dissipation
Noise Equivalent Power - Nep
Photocurrent
Responsivity
Factory Pack Quantity :
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We are delighted to provide the BP 104 FAS-Z from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BP 104 FAS-Z and other electronic components in the Photodiodes category and beyond.

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2007-04-18 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BP 104 FAS Features: Besondere Merkmale: Especially suitable for applications from Speziell geeignet fr Anwendungen im Bereich von 730 nm... 1100 nm 730 nm bis 1100 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) Suitable for SMT SMT-fhig Applications Anwendungen Photointerrupters Lichtschranken IR remote control of hi-fi and TV sets, video tape IR-Fernsteuerung von Fernseh- und recorders, dimmers, remote controls of various Rundfunkgerten, Videorecordern, Lichtdimmern, equipment Gertefernsteuerungen Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 870 nm, E = 1 mW/cm , V = 5 V e R I A P BP 104 FAS 34 ( 25) Q65110A2672 2007-04-18 1Version 1.0 BP 104 FAS Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 20 V R Sperrspannung Total power dissipation P 150 mW tot Verlustleistung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent I 34 ( 25) A P Fotostrom 2 (V = 5 V, = 870 nm, E = 1 mW/cm ) R e Wavelength of max. sensitivity 880 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 730 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A4.84 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.2 x 2.2 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.63 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 870 nm) Quantum yield of the chip 0.90 Electro Quantenausbeute des Chips ns ( = 870 nm) /Photon 2007-04-18 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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