2016-03-31 Silicon PIN Photodiode Version 1.4 BPW 34 Features: Especially suitable for applications from 400 nm to 1100 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density Applications Photointerrupters Industrial electronics For control and drive circuits IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment Ordering Information Type: Photocurrent Ordering Code I A P E = 1000 lx, Std. Light A, V v R = 5 V BPW 34 80 ( 50) Q62702P0073 2016-03-31 1Version 1.4 BPW 34 Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operating and storage temperature range T T -40 ... 100 C op stg Reverse voltage V 32 V R Total Power dissipation P 150 mW tot ESD withstand voltage V 2000 V ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) Characteristics (T = 25 C) A Parameter Symbol Values Unit Spectral sensitivity (typ) S 80 nA/Ix (V = 5 V, standard light A, T = 2856 K) R Photocurrent (typ (min)) I 80 ( 50) A P (E = 1000 lx, Std. Light A, V = 5 V) v R Wavelength of max. sensitivity (typ) 850 nm S max Spectral range of sensitivity (typ) (typ) 400 nm 10% ... 1100 2 Radiant sensitive area (typ) A 7.02 mm Dimensions of radiant sensitive area (typ) L x W 2.65 x 2.65 mm x mm Half angle (typ) 60 Dark current (typ (max)) I 2 ( 30) nA R (V = 10 V) R Spectral sensitivity of the chip (typ) S 0.62 A / W typ ( = 850 nm) Quantum yield of the chip (typ) 0.90 Electro ( = 850 nm) ns /Photon Open-circuit voltage (typ (min)) V 365 ( 300) mV O (E = 1000 lx, Std. Light A) v Short-circuit current (typ) I 80 A SC (E = 1000 lx, Std. Light A) v Rise and fall time (typ) t , t 0.02 s r f (V = 5 V, R = 50 , = 850 nm, I = 800 A) R L P Forward voltage (typ) V 1.3 V F (I = 100 mA, E = 0) F Capacitance (typ) C 72 pF 0 (V = 0 V, f = 1 MHz, E = 0) R Temperature coefficient of V (typ) TC -2.6 mV / K O V 2016-03-31 2