2016-06-30 Silicon PIN Photodiode with Daylight Blocking Filter Version 1.4 BPW 34 FS Features: Especially suitable for the wavelength range of 780 nm to 1100 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density Suitable for reflow soldering The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications Automotive (eg rain sensor, headset) IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment Photointerrupters Ordering Information Type: Photocurrent Ordering Code I A P 2 = 950 nm, E = 1 mW/cm , V e R = 5 V BPW 34 FS 50 ( 40) Q65110A2700 2016-06-30 1Version 1.4 BPW 34 FS Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operating and storage temperature range T T -40 ... 100 C op stg Reverse voltage V 16 V R Reverse voltage V 32 V R (t < 2 min) Total Power dissipation P 150 mW tot ESD withstand voltage V 2000 V ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) Characteristics (T = 25 C) A Parameter Symbol Values Unit Photocurrent (typ (min)) I 50 ( 40) A P 2 (V = 5 V, = 950 nm, E =1 mW/cm ) R e Wavelength of max. sensitivity (typ) 950 nm S max Spectral range of sensitivity (typ) (typ) 780 nm 10% ... 1100 2 Radiant sensitive area (typ) A 7.02 mm Dimensions of radiant sensitive area (typ) L x W 2.65 x 2.65 mm x mm Half angle (typ) 60 Dark current (typ (max)) I 2 ( 30) nA R (V = 10 V) R Spectral sensitivity of the chip (typ) S 0.7 A / W typ ( = 950 nm) Quantum yield of the chip (typ) 0.91 Electro ( = 950 nm) ns /Photon Open-circuit voltage (typ (min)) V 330 ( 275) mV O 2 (E = 0.5 mW/cm , = 950 nm) e Short-circuit current (typ) I 25 A SC 2 (E = 0.5 mW/cm , = 950 nm) e Rise and fall time (typ) t , t 0.02 s r f (V = 5 V, R = 50 , = 850 nm, I = 800 A) R L P Forward voltage (typ) V 1.3 V F (I = 100 mA, E = 0) F Capacitance (typ) C 72 pF 0 (V = 0 V, f = 1 MHz, E = 0) R Temperature coefficient of V (typ) TC -2.6 mV / K O V 2016-06-30 2