Product Information

Q62702P0929

Q62702P0929 electronic component of OSRAM

Datasheet
Photodiode PIN Chip 950nm 0.59A/W Sensitivity 2-Pin PDIL

Manufacturer: OSRAM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.9237 ea
Line Total: USD 92.37

0 - Global Stock
MOQ: 100  Multiples: 50
Pack Size: 50
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 100
Multiples : 50
100 : USD 0.9237
250 : USD 0.8088
500 : USD 0.7581
1000 : USD 0.6962

     
Manufacturer
Product Category
Power Dissipation
Pin Count
Rise Time
Fall Time
Forward Voltage
Reverse Breakdown Voltage
Mounting
Operating Temperature Classification
Operating Temp Range
Rad Hardened
Peak Wavelength
Package Type
Type
Polarity
Dark Current
Light Current
Photodiode Type
Responsivity
Photodiode Material
LoadingGif

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2007-03-29 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BPW 34 F Features: Besondere Merkmale: Especially suitable for the wavelength range of Speziell geeignet fr den Wellenlngenbereich von 780 nm to 1100 nm 780 nm bis 1100 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) DIL plastic package with high packing density DIL-Plastikbauform mit hoher Packungsdichte Applications Anwendungen Automotive (eg rain sensor, headset) Automotomobil (z.B. Regensensor, Headset) IR remote control of hi-fi and TV sets, video tape IR-Fernsteuerung von Fernseh- und recorders, dimmers, remote controls of various Rundfunkgerten, Videorecordern, Lichtdimmern, equipment Gertefernsteuerungen Photointerrupters Lichtschranken Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 1 mW/cm , V = 5 V e R I A P BPW 34 F 50 ( 40) Q62702P0929 2007-03-29 1Version 1.0 BPW 34 F Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 16 V R Sperrspannung Reverse voltage V 32 V R Sperrspannung (t < 2 min) Total power dissipation P 150 mW tot Verlustleistung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent I 50 ( 40) A P Fotostrom 2 (V = 5 V, = 950 nm, E =1 mW/cm ) R e Wavelength of max. sensitivity 950 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 780 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A7.02 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.65 x 2.65 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.7 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 950 nm) 2007-03-29 2

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