Q62702P0929 OSRAM

Q62702P0929 electronic component of OSRAM Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of Q62702P0929 across the USA, India, Europe, Australia, and various other global locations. Q62702P0929 are a product manufactured by OSRAM. We provide cost-effective solutions for Q62702P0929, ensuring timely deliveries around the world.

Part No. Q62702P0929
Manufacturer: OSRAM
Category: Unclassified
Description: Photodiode PIN Chip 950nm 0.59A/W Sensitivity 2-Pin PDIL
Datasheet: Q62702P0929 Datasheet (PDF)
Price (USD)
100: USD 0.953 ea
Line Total: USD 95.3 
Availability : 0
  
QtyUnit Price
100$ 0.953
250$ 0.8345
500$ 0.7821
1000$ 0.7183

Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 100
Multiples : 50
QtyUnit Price
100$ 0.953
250$ 0.8345
500$ 0.7821
1000$ 0.7183

   
Manufacturer
Product Category
Power Dissipation
Pin Count
Rise Time
Fall Time
Forward Voltage
Reverse Breakdown Voltage
Mounting
Operating Temperature Classification
Operating Temp Range
Rad Hardened
Peak Wavelength
Package Type
Type
Polarity
Dark Current
Light Current
Photodiode Type
Responsivity
Photodiode Material
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the Q62702P0929 from our OSRAM manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Q62702P0929 and other electronic components in the OSRAM manufacturer and beyond.

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2007-03-29 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BPW 34 F Features: Besondere Merkmale: Especially suitable for the wavelength range of Speziell geeignet fr den Wellenlngenbereich von 780 nm to 1100 nm 780 nm bis 1100 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) DIL plastic package with high packing density DIL-Plastikbauform mit hoher Packungsdichte Applications Anwendungen Automotive (eg rain sensor, headset) Automotomobil (z.B. Regensensor, Headset) IR remote control of hi-fi and TV sets, video tape IR-Fernsteuerung von Fernseh- und recorders, dimmers, remote controls of various Rundfunkgerten, Videorecordern, Lichtdimmern, equipment Gertefernsteuerungen Photointerrupters Lichtschranken Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 1 mW/cm , V = 5 V e R I A P BPW 34 F 50 ( 40) Q62702P0929 2007-03-29 1Version 1.0 BPW 34 F Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 16 V R Sperrspannung Reverse voltage V 32 V R Sperrspannung (t < 2 min) Total power dissipation P 150 mW tot Verlustleistung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent I 50 ( 40) A P Fotostrom 2 (V = 5 V, = 950 nm, E =1 mW/cm ) R e Wavelength of max. sensitivity 950 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 780 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A7.02 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.65 x 2.65 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.7 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 950 nm) 2007-03-29 2

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