Product Information

Q65110A1211

Q65110A1211 electronic component of OSRAM

Datasheet
Phototransistor Chip Silicon 570nm 3-Pin DIP SMD T/R

Manufacturer: OSRAM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

87: USD 0.9803 ea
Line Total: USD 85.29

0 - Global Stock
MOQ: 87  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 87
Multiples : 1
87 : USD 0.9803
100 : USD 0.7922
250 : USD 0.7635
500 : USD 0.6608
1000 : USD 0.5479

     
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2007-04-02 Silicon NPN Phototransistor with V Characteristics NPN-Silizium-Fototransistor mit V -Charakteristik Version 1.0 SFH 3410 Features: Besondere Merkmale: Package: Smart DIL Gehuse: Smart DIL Especially suitable for applications from 350 nm to Speziell geeignet fr Anwendungen im Bereich von 970 nm 350 nm bis 970 nm Adapted to human eye sensitivity (V ) Angepat an die Augenempfindlichkeit (V ) SMT package without base connection, suitable for SMT-Bauform ohne Basisanschlu, geeignet fr IR reflow soldering IR-Reflow-Lten Only available on tape and reel Nur gegurtet lieferbar Applications Anwendungen For control and drive circuits Messen / Steuern / Regeln Exposure meter for daylight and artificial light Beleuchtungssensor Sensor for backlight-dimming Dimmungssensor fr Hintergrundbeleuchtung Ambient light detector Umgebungslichtsensor Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer E = 20 lx, Std. Light A, V = 5 V v CE I A PCE SFH 3410 3.2 ... 25 Q65110A1211 SFH 3410-1/2 3.2 ... 10 Q65110A2653 SFH 3410-2/3 5 ... 16 Q65110A2654 SFH 3410-3/4 8 ... 25 Q65110A2655 2007-04-02 1Version 1.0 SFH 3410 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Collector-emitter voltage V 5.5 V CE Kollektor-Emitter-Spannung Collector current I 20 mA C Kollektorstrom Emitter-collector voltage V 0.5 V EC Emitter-Kollektor-Spannung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength of max. sensitivity 570 nm S max Wellenlnge der max. Fotoempfindlichkeit 2 Radiant sensitive area A0.29 mm Bestrahlungsempfindliche Flche Dimensions of chip area L x W 0.75 x 0.75 mm x Abmessung der Chipflche mm Half angle 60 Halbwinkel Capacitance C 3.9 pF CE Kapazitt (V = 0 V, f = 1 MHz, E = 0) CE Photocurrent I > 3.2 A PCE Fotostrom (E = 20 lx, Std. Light A, V = 5 V) v CE Dark current I 3 ( 50) nA CE0 Dunkelstrom (V = 5 V, E = 0) CE 2007-04-02 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
AMS OSRAM
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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