X-On Electronics has gained recognition as a prominent supplier of SFH 313 FA-34 Phototransistors across the USA, India, Europe, Australia, and various other global locations. SFH 313 FA-34 Phototransistors are a product manufactured by OSRAM. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

SFH 313 FA-34 OSRAM

SFH 313 FA-34 electronic component of OSRAM
SFH 313 FA-34 OSRAM
SFH 313 FA-34 Phototransistors
SFH 313 FA-34  Optoelectronics

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See Product Specifications
Part No. SFH 313 FA-34
Manufacturer: OSRAM
Category: Phototransistors
Description: OSRAM Opto Semiconductors Phototransistors PHOTOTRANSISTOR
Datasheet: SFH 313 FA-34 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.845 ea
Line Total: USD 0.84 
Availability - 82147
Ship by Fri. 20 Jun to Tue. 24 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
82147
Ship by Fri. 20 Jun to Tue. 24 Jun
MOQ : 1
Multiples : 1
1 : USD 0.845
10 : USD 0.5887
100 : USD 0.3883
500 : USD 0.3333
1000 : USD 0.3168
2000 : USD 0.2992
5000 : USD 0.2805
10000 : USD 0.2695
25000 : USD 0.2574

   
Manufacturer
Product Category
Product
Package / Case
Maximum On-State Collector Current
Mounting Style
Peak Wavelength
Operating Supply Voltage
Collector- Emitter Voltage VCEO Max
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Dark Current
Rise Time
Fall Time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Hts Code
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We are delighted to provide the SFH 313 FA-34 from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SFH 313 FA-34 and other electronic components in the Phototransistors category and beyond.

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2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 SFH 313 FA Features: Besondere Merkmale: Spectral range of sensitivity: (typ) 740 ... 1080 Spektraler Bereich der Fotoempfindlichkeit: nm (typ) 740 ... 1080 nm Package: 5mm Radial (T 1 ), Epoxy Gehuse: 5mm Radial (T 1 ), Harz Special: 5 mm plastic package Besonderheit: 5 mm-Plastikbauform High photosensitivity Hohe Fotoempfindlichkeit Especially suitable for applications from 740 nm to Speziell geeignet fr Anwendungen im Bereich von 1080 nm 740 nm bis 1080 nm Applications Anwendungen Computer-controlled flashes Computer-Blitzlichtgerte Photointerrupters Lichtschranken Industrial electronics Industrieelektronik For control and drive circuits Messen / Steuern / Regeln Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 0.5 mW/cm , V = 5 V e CE I A PCE SFH 313 FA 2500 Q62702P1674 SFH 313 FA-2/3 4000 ... 12500 Q62702P3597 SFH 313 FA-3/4 6300 Q62702P5196 2014-01-14 1Version 1.1 SFH 313 FA Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Collector-emitter voltage V 70 V CE Kollektor-Emitter-Spannung Collector current I 50 mA C Kollektorstrom Collector surge current I 100 mA CS Kollektorspitzenstrom ( < 10 s) Emitter-collector voltage V 7V EC Emitter-Kollektor-Spannung Total power dissipation P 200 mW tot Verlustleistung Thermal resistance R 375 K / W thJA Wrmewiderstand Characteristics (T = 25 C, = 950 nm) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength of max. sensitivity 870 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 740 ... 1080 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A0.55 mm Bestrahlungsempfindliche Flche Dimensions of chip area L x W 1 x 1 mm x Abmessung der Chipflche mm 2014-01-14 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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