X-On Electronics has gained recognition as a prominent supplier of SFH4240 infrared emitters - high power across the USA, India, Europe, Australia, and various other global locations. SFH4240 infrared emitters - high power are a product manufactured by Osram. We provide cost-effective solutions for infrared emitters - high power, ensuring timely deliveries around the world.

SFH4240 Osram

SFH4240 electronic component of Osram
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See Product Specifications
Part No.SFH4240
Manufacturer: Osram
Category:Infrared Emitters - High Power
Description: Infrared Emitters - High Power OSRAM LED
Datasheet: SFH4240 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.5961 ea
Line Total: USD 2.98

Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 20 Jun to Wed. 26 Jun

MOQ : 5
Multiples : 1
5 : USD 1.0227
10 : USD 0.6441
25 : USD 0.5741
50 : USD 0.511
100 : USD 0.4472
150 : USD 0.4365

   
Manufacturer
Product Category
Brand
Peak Wavelength
Angle Of Half Intensity
Diode Case Style
Radiant Intensity Ie
Rise Time
Fall Time Tf
Forward Current Ifav
Forward Voltage Vf Max
Operating Temperature Min
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
Viewing Angle
LoadingGif
 
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We are delighted to provide the SFH4240 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SFH4240 and other electronic components in the Infrared Emitters - High Power category and beyond.

2016-02-11 High Power Infrared Emitter (940 nm) Version 1.4 SFH 4240 Features: High Power Infrared LED Short switching times High forward current allowed at high temperature The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications Infrared Illumination for cameras IR data transmission Sensor technology Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I mW/sr e I = 100 mA, t = 20 ms F p SFH 4240 18 ( 10) Q65110A7513 Note: Measured at a solid angle of = 0.01 sr 2016-02-11 1Version 1.4 SFH 4240 Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T T -40 ... 100 C op stg Reverse voltage V 5 V R Forward current I 100 mA F Surge current I 1 A FSM (t = 100 s, D = 0) p Power consumption P 180 mW tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 12 Thermal resistance junction - ambient R 300 K / W thJA Thermal resistance junction - soldering point R 140 K / W thJS 2) page 12 Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 950 nm peak (I = 100 mA, t = 20 ms) F p Centroid wavelength (typ) 940 nm centroid (I = 100 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 42 nm max (I = 100 mA, t = 20 ms) F p Half angle (typ) 60 Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x mm Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 12 ns e e max r f (I = 100 mA, R = 50 ) F L Forward voltage (typ (max)) V 1.5 ( 1.8) V F (I = 100 mA, t = 20 ms) F p Forward voltage (typ (max)) V 2.3 ( 3) V F (I = 1 A, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 55 mW e (I =100 mA, t =20 ms) F p 2016-02-11 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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