Product Information

SFH 4714A

SFH 4714A electronic component of OSRAM

Datasheet
Infrared Emitters - High Power Infrared 850nm OSLON Black

Manufacturer: OSRAM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.909 ea
Line Total: USD 1.91

5930 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5930 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

SFH 4714A
OSRAM

1 : USD 1.909
10 : USD 1.219
100 : USD 0.943
600 : USD 0.8821
1200 : USD 0.7452
2400 : USD 0.7383
4800 : USD 0.7383
9600 : USD 0.7268
24600 : USD 0.7153

     
Manufacturer
Product Category
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif

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2015-11-19 OSLON Black Series (850 nm) - 150 Version 1.1 SFH 4714A Features: IR lightsource with high efficiency Low thermal resistance (Max. 18 K/W) Centroid wavelength 850 nm Superior Corrosion Robustness (see chapter package outlines) Applications Infrared Illumination for cameras Surveillance systems Machine vision systems Gesture recognition systems Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I mW/sr e I = 1 A, t = 10 ms F p SFH 4714A 145 ( 100) Q65111A8234 Note: measured at a solid angle of = 0.01 sr 2015-11-19 1Version 1.1 SFH 4714A Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T T -40 ... 125 C op stg Junction temperature T 145 C j Reverse voltage V 5 V R Forward current I 1000 mA F Surge current I 1 A FSM (D 1) Power consumption P 2.3 W tot Thermal resistance junction - solder point R 18 K / W thJS ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 860 nm peak (I = 1 A, t = 10 ms) F p Centroid wavelength (typ) 850 nm centroid (I = 1 A, t = 10 ms) F p Spectral bandwidth at 50% of I (typ) 34 nm max (I = 1 A, t = 10 ms) F p Half angle (typ) 75 Dimensions of active chip area (typ) L x W 0.75 x 0.75 mm x mm Rise and fall times of I ( 10% and 90% of I ) (typ) t / t 11/ 15 ns e e max r f (I = 1 A, R = 50 ) F L Forward voltage (typ (max)) V 1.75 ( 2.3) V F (I = 1 A, t = 10 ms) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 675 mW e (I = 1 A, t = 100 s) F p Total radiant flux (typ) 660 mW e (I = 1 A, t = 10 ms) F p 2015-11-19 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
AMS OSRAM
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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