This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA2163 Silicon PNP epitaxial planar type For high frequency ampli cation Unit: mm FFeeaattuurreess HHHHiiiigggghhhh ttttrrrraaaannnnssssiiiittttiiiioooonnnn ffffrrrreeeeqqqquuuueeeennnnccccyyyy ffff TT 3 2 OOppttiimmuumm ffoorr hhiigghh--ddeennssiittyy mmoouunnttiinngg aanndd ddoowwnnssiizziinngg ooff tthhee eeqquuiippmmeenntt ffoorr Ultraminiature leadless package 1 0.6 mm 1.0 mm (height 0.39 mm) +0.01 1.00 0.05 0.39 0.03 AAbbssoolluuttee MMaaxxiimmuumm RRaattiinnggss T == 2255C aaa 0.25 0.05 0.25 0.05 1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 30 V CBO 3 2 Collector-emitter voltage (Base open) V 20 V 0.65 0.01 0.05 0.03 CEO Emitter-base voltage (Collector open) V 5 V EBO Collector current I 30 mA C 1: Base 2: Emitter Collector power dissipation P 100 mW C 3: Collector ML3-N2 Package Junction temperature TTT 125 C jj Marking Symbol: 6J Storage temperature TTT 55 to +125 C ssttgg EElleeccttrriiccaall CChhaarraacctteerriissttiiccss T == 2255C3C aaa Parameter Symbol Conditions Min Typ Max Unit Base-emitter voltage VVV V == 10 V, I = 1 mA V 00..77 BBEE CCCEEE C Collector-base cutoff current (Emitter open) I V = 10 V, I == 00 00..11 A CBO CB EEE Collector-emitter cutoff current (Base open) I V == 20 V, I = 0 100 A CEO CCCEEE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 10 A EBO EB C Forward current transfer ratio hhh V == 10 V, I = 1 mA 70 220 FFEE CCCEEE C Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 00..11 V CE(sat) C B Transition frequency fff V = 10 V, I == 11 mmAA,, ff == 220000 MMHHzz 150 300 MHz TT CB EEE Noise gure NF V = 10 V, I == 11 mmAA,, ff == 55 MMHHzz 2.8 4.0 dB CB EEE Reverse transfer impedance Z V = 10 V, I == 11 mmAA,, ff == 22 MMHHzz 22 50 rb CB EEE Reverse transfer capacitance (Common emitter) C V = 10 V, I == 11 mmAA,, ff == 1100..77 MMHHzz 1.2 2.0 pF re CB EEE Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: May 2005 SJC00336AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA2163 2SA2163 I -V 2SA2163 I -V 2SA2163 P -T C CE C CE C a P TTTT II VV I VV C aaaa C CB C CE 20 30 120 I = 200 A B V = 10 V T = 25C CE a 180 A 16 160 A 140 A T = 85C a 20 80 120 A 25C 12 25C 100 A 8 10 40 4 0 0 0 0 4 8 12 0 0.4 0.8 1.2 0 40 80 120 ( ) Collector-base voltage V (V) Collector-emitter voltage V V ( ) Ambient temperature T C CB CE a 2SA2163 C -V 2SA2163 V -I 2SA2163 h -I ob CB CE(sat) C FE C V II hhh II CC VV CE(sat) C FFEE CCC ob CB 10 160 1 I /I = 10 f = 1 MHz C B V = 5 V CE T = 25C a T = 85C a 120 25C T = 85C a 25C 1 0.1 80 25C 25C 40 0.1 0.01 0 0 10 20 30 0.1 1 10 100 0.1 1 10 100 ( ) ( ) Collector-base voltage V V Collector current I mA ( ) Collector current I mA CB C C 2 SJC00336AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.