X-On Electronics has gained recognition as a prominent supplier of 2SB09760RA bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2SB09760RA bipolar transistors - bjt are a product manufactured by Panasonic. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2SB09760RA Panasonic

2SB09760RA electronic component of Panasonic
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Part No.2SB09760RA
Manufacturer: Panasonic
Category:Bipolar Transistors - BJT
Description: TRANS PNP 18V 5A TO-92
Datasheet: 2SB09760RA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.6152
10 : USD 0.4569
100 : USD 0.3791
N/A

0 - WHS 2


Multiples : 1
N/A

     
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RoHS - XON
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We are delighted to provide the 2SB09760RA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB09760RA and other electronic components in the Bipolar Transistors - BJT category and beyond.

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0976 (2SB976) Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm For DC-DC converter 5.00.2 4.00.2 For stroboscope Features Low collector-emitter saturation voltage V CE(sat) 0.70.1 Large collector current I C Absolute Maximum Ratings T = 25C a +0.15 +0.15 Parameter Symbol Rating Unit 0.45 0.45 0.1 0.1 +0.6 +0.6 Collector-base voltage (Emitter open) V 27 V 2.5 2.5 0.2 0.2 CBO Collector-emitter voltage (Base open) V 18 V CEO 123 Emitter-base voltage (Collector open) V 7V 1: Emitter EBO 2: Collector Collector current I 5A C 3: Base Peak collector current I 8A TO-92-B1 Package CP Collector power dissipation P 0.75 W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 1 mA, I = 0 18 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 100 nA CBO CB E Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 1 A EBO EB C 1, 2 * Forward current transfer ratio h V = 2 V, I = 2 A 125 625 FE CE C 1 * Collector-emitter saturation voltage V I = 3 A, I = 0.1 A 0.4 1.0 V CE(sat) C B Transition frequency f V = 6 V, I = 50 mA, f = 200 MHz 120 MHz T CB E Collector output capacitance C V = 20 V, I = 0, f = 1 MHz 60 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank Q R h 125 to 205 180 to 625 FE Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00064BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0976 P T I V I V C a C CE C BE 1.0 6 12 T = 25C V = 2 V a CE I = 40 mA B 35 mA 5 30 mA 10 0.8 25 mA 25C 4 8 20 mA 0.6 T = 75C 15 mA a 25C 3 6 10 mA 0.4 2 4 5 mA 0.2 1 2 1 mA 0 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) Collector-emitter voltage V (V) ( ) Base-emitter voltage V V a CE BE V I h I f I CE(sat) C FE C T E 100 240 1 000 I / I = 30 C B V = 2 V CE V = 6 V CB T = 25C a 200 800 10 160 600 1 120 T = 75C a T = 75C a 400 25C 25C 80 25C 25C 0.1 200 40 0.01 0 0 0.01 0.1 1 10 0.01 0.1 1 10 1 10 100 ( ) Collector current I A Emitter current I (mA) Collector current I (A) C E C C V ob CB 200 I = 0 E f = 1 MHz T = 25C a 160 120 80 40 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00064BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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