X-On Electronics has gained recognition as a prominent supplier of DMA2610F0R bipolar transistors - pre-biased across the USA, India, Europe, Australia, and various other global locations. DMA2610F0R bipolar transistors - pre-biased are a product manufactured by Panasonic. We provide cost-effective solutions for bipolar transistors - pre-biased, ensuring timely deliveries around the world.

DMA2610F0R Panasonic

DMA2610F0R electronic component of Panasonic
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See Product Specifications
Part No.DMA2610F0R
Manufacturer: Panasonic
Category:Bipolar Transistors - Pre-Biased
Description: Trans GP BJT PNP 50V 0.1A 5-Pin SC-74A Embossed T/R
Datasheet: DMA2610F0R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6000: USD 0.0998 ea
Line Total: USD 598.8

Availability - 0
MOQ: 6000  Multiples: 6000
Pack Size: 6000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 6000
Multiples : 6000
6000 : USD 0.0998
12000 : USD 0.0943
18000 : USD 0.092
30000 : USD 0.0905
60000 : USD 0.0889
300000 : USD 0.0874
600000 : USD 0.0859

     
Manufacturer
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RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Maximum Operating Temperature
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We are delighted to provide the DMA2610F0R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMA2610F0R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

DMA2610F Unit: mm Silicon PNP epitaxial planar type For digital circuits Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: R3 Basic Part Number Dual DRA2143X (Common emitter) 1: Base (Tr1) 4: Collector (Tr2) Packaging 2: Emitter (Common) 5: Collector (Tr1) DMA2610F0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 3: Base (Tr2) Panasonic Mini5-G3-B Absolute Maximum Ratings T = 25C a JEITA SC-74A Parameter Symbol Rating Unit Code MO-178 Collector-base voltage (Emitter open) V 50 V CBO Tr1 (C1) (C2) Collector-emitter voltage (Base open) V 50 V CEO 5 4 Tr2 Collector current I 100 mA C Tr1 Tr2 Total power dissipation P 300 mW T R R 2 2 Junction temperature T 150 C j R R 1 1 Overall Operating ambient temperature T 40 to +85 C opr 1 2 3 (B1) (E) (B2) Storage temperature T 55 to +150 C stg R 4.7 k 1 Resistance value R 10 k 2 Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 1.0 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 30 FE CE C h 1 * FE h ratio V = 10 V, I = 5 mA 0.50 0.99 FE CE C (Small/Large) Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 1.7 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.6 V I(off) CE C Input resistance R 30% 4.7 +30% k 1 Resistance ratio R / R 0.37 0.47 0.57 1 2 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Ratio between 2 elements * Publication date: September 2013 Ver. DED 1DMA2610F DMA2610F IC-VCE DMA2610F hFE-IC DMA2610F PT-Ta P T I V h I T a C CE FE C 120 300 350 V = 10 V CE T = 25C a I = 800 A B 300 100 250 700 A 250 600 A T = 85C a 80 200 500 A 200 60 150 400 A 25C 150 300 A 40C 40 100 100 200 A 20 50 50 100 A 0 0 0 0 2 4 6 8 10 12 0.1 1 10 100 0 40 80 120 160 200 ( ) Collector-emitter voltage V (V) Ambient temperature T C Collector current I (mA) CE a C DMA2610F I -V DMA2610F VCEsat-IC DMA2610F VIN-IO O IN V I I V V I CE(sat) C O IN IN O 10 100 10 V = 5 V I / I = 20 V = 0.2 V O C B O T = 85C a 1 10 1 25C 1 10 T = 40C a 25C T = 85C a 40C 0.1 1 85C 40C 2 10 25C 3 0.01 0.1 10 0.1 1 10 100 0 0.5 1.0 1.5 0.1 1 10 100 Output current I (mA) Collector current I (mA) (V) O Input voltage V C IN Ver. DED 2 Collector-emitter saturation voltage V (V) ( ) Total power dissipation P mW CE(sat) T ( ) Output current I mA O Collector current I (mA) C Forward current transfer ratio h Input voltage V (V) FE IN

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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