X-On Electronics has gained recognition as a prominent supplier of DMA2610M0R bipolar transistors - pre-biased across the USA, India, Europe, Australia, and various other global locations. DMA2610M0R bipolar transistors - pre-biased are a product manufactured by Panasonic. We provide cost-effective solutions for bipolar transistors - pre-biased, ensuring timely deliveries around the world.

DMA2610M0R

DMA2610M0R electronic component of Panasonic
Images are for reference only
See Product Specifications
Part No.DMA2610M0R
Manufacturer: Panasonic
Category:Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
Datasheet: DMA2610M0R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.1302
9000 : USD 0.1244
24000 : USD 0.123
45000 : USD 0.1187
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Number Of Channels
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the DMA2610M0R Bipolar Transistors - Pre-Biased at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the DMA2610M0R Bipolar Transistors - Pre-Biased.

DMA2610M Unit: mm Silicon PNP epitaxial planar type For digital circuits Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: S1 Basic Part Number Dual DRA2123J (Common emitter) 1: Base (Tr1) 4: Collector (Tr2) Packaging 2: Emitter (Common) 5: Collector (Tr1) DMA2610M0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 3: Base (Tr2) Panasonic Mini5-G3-B Absolute Maximum Ratings T = 25C a JEITA SC-74A Parameter Symbol Rating Unit Code MO-178 Collector-base voltage (Emitter open) V 50 V CBO Tr1 (C1) (C2) Collector-emitter voltage (Base open) V 50 V CEO 5 4 Tr2 Collector current I 100 mA C Tr1 Tr2 Total power dissipation P 300 mW T R R 2 2 Junction temperature T 150 C R j R 1 1 Overall Operating ambient temperature T 40 to +85 C opr 1 2 3 (B1) (E) (B2) Storage temperature T 55 to +150 C stg R 2.2 k 1 Resistance value R 47 k 2 Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.2 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 80 FE CE C h 1 * FE h ratio V = 10 V, I = 5 mA 0.50 0.99 FE CE C (Small/Large) Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 1.2 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.4 V I(off) CE C Input resistance R 30% 2.2 +30% k 1 Resistance ratio R / R 0.037 0.047 0.057 1 2 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Ratio between 2 elements * Publication date: September 2013 Ver. CED 1DMA2610M DMA2610M_IC-VCE DMA2610M_hFE-IC DMA2610M_PT-Ta P T I V h I T a C CE FE C 120 350 300 V = 10 V CE T = 25C a I = 700 A T = 85C B a 300 100 250 600 A 250 80 500 A 200 25C 200 400 A 60 150 40C 300 A 150 40 100 200 A 100 20 50 50 100 A 0 0 0 0 2 4 6 8 10 12 0 40 80 120 160 200 0.1 1 10 100 ( ) Collector-emitter voltage V (V) Ambient temperature T C Collector current I (mA) CE a C DMA2610M_I -V DMA2610M_VCEsat-IC DMA2610M_VIN-IO O IN V I I V V I CE(sat) C O IN IN O 10 100 10 V = 5 V I / I = 20 V = 0.2 V O C B O T = 85C a 1 1 10 25C 1 10 T = 40C a T = 85C 25C a 0.1 1 40C 2 85C 40C 10 25C 3 0.01 0.1 10 0.1 1 10 100 0 0.4 0.8 1.2 0.1 1 10 100 Output current I (mA) Collector current I (mA) (V) O C Input voltage V IN Ver. CED 2 Collector-emitter saturation voltage V (V) ( ) Total power dissipation P mW CE(sat) T ( ) Output current I mA O Collector current I (mA) C Forward current transfer ratio h Input voltage V (V) FE IN

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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