DMA56105 Unit: mm Silicon PNP epitaxial planar type For digital circuits DMA26105 in SMini5 type package Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: K1 Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2114T (Common emitter) 2: Emitter (Common) 5: Collector (Tr1) 3: Base (Tr2) Packaging Panasonic SMini5-F3-B DMA561050R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) JEITA SC-113CB Code SOT-353 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit (C1) (C2) 5 4 Collector-base voltage (Emitter open) V 50 V CBO Tr1 Collector-emitter voltage (Base open) V 50 V CEO Tr1 Tr2 Tr2 Collector current I 100 mA C R R 1 1 Total power dissipation P 150 mW T Junction temperature T 150 C 1 2 3 j (B1) (E) (B2) Overall Operating ambient temperature T 40 to +85 C opr Resistance value R 10 k 1 Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.01 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 160 460 FE CE C 1 h * FE h ratio V = 10 V, I = 5 mA 0.50 0.99 FE CE C (Small/Large) Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 1.2 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.4 V I(off) CE C Input resistance R 30% 10 +30% k 1 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Ratio between 2 elements * Publication date: September 2013 Ver. DED 1DMA56105 DMA56105 PT-Ta DMA56105 IC-VCE DMA56105 hFE-IC P T I V h I T a C CE FE C 200 120 V = 10 V CE T = 25C a 400 I = 800 A B T = 85C 700 A a 100 600 A 150 80 500 A 300 25C 400 A 100 60 300 A 200 40C 40 200 A 50 100 20 100 A 0 0 0 0 40 80 120 160 200 0 2 4 6 8 10 12 0.1 1 10 100 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DMA56105 I -V DMA56105 VIN-IO DMA56105 VCEsat-IC O IN V I I V V I CE(sat) C O IN IN O 10 10 100 I / I = 20 C B V = 5 V O V = 0.2 V O T = 85C a 1 25C 10 1 40C 1 10 T = 40C T = 85C a a 25C 0.1 1 85C 2 10 40C 3 0.01 10 0.1 0.1 1 10 100 0 0.4 0.8 1.2 0.1 1 10 100 Output current I (mA) Collector current I (mA) Input voltage V (V) O C IN Ver. DED 2 25C Collector-emitter saturation voltage V (V) ( ) CE(sat) Total power dissipation P mW T ( ) Output current I mA Collector current I (mA) O C Input voltage V (V) Forward current transfer ratio h IN FE