X-On Electronics has gained recognition as a prominent supplier of DMA561090R bipolar transistors - pre-biased across the USA, India, Europe, Australia, and various other global locations. DMA561090R bipolar transistors - pre-biased are a product manufactured by Panasonic. We provide cost-effective solutions for bipolar transistors - pre-biased, ensuring timely deliveries around the world.

DMA561090R

DMA561090R electronic component of Panasonic
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See Product Specifications
Part No.DMA561090R
Manufacturer: Panasonic
Category:Bipolar Transistors - Pre-Biased
Description: Panasonic Bipolar Transistors - Pre-Biased COMP TRANS WBLT IN RES FLT LD 2.0x2.1mm
Datasheet: DMA561090R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.3057
10 : USD 0.8672
100 : USD 0.216
500 : USD 0.2016
1000 : USD 0.1649
3000 : USD 0.1466
9000 : USD 0.144
24000 : USD 0.1361
45000 : USD 0.1296
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Number Of Channels
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the DMA561090R Bipolar Transistors - Pre-Biased at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the DMA561090R Bipolar Transistors - Pre-Biased.

DMA56109 Unit: mm Silicon PNP epitaxial planar type For digital circuits DMA26109 in SMini5 type package Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: P1 Basic Part Number Dual DRA2113Z (Common emitter) 1: Base (Tr1) 4: Collector (Tr2) 2: Emitter (Common) 5: Collector (Tr1) Packaging 3: Base (Tr2) DMA561090R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic SMini5-F3-B JEITA SC-113CB Absolute Maximum Ratings T = 25C a Code SOT-353 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 50 V (C1) (C2) CBO 5 4 Tr1 Collector-emitter voltage (Base open) V 50 V CEO Tr2 Tr1 Tr2 Collector current I 100 mA C R R 2 2 Total power dissipation P 150 mW T R R 1 1 Junction temperature T 150 C j Overall 1 2 3 Operating ambient temperature T 40 to +85 C opr (B1) (E) (B2) Storage temperature T 55 to +150 C stg R 1 k 1 Resistance value R 10 k 2 Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 1.5 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 30 FE CE C h 1 * FE h ratio V = 10 V, I = 5 mA 0.50 0.99 FE CE C (Small/Large) Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 1.0 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.4 V I(off) CE C Input resistance R 30% 1 +30% k 1 Resistance ratio R / R 0.08 0.10 0.12 1 2 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Ratio between 2 elements * Publication date: September 2013 Ver. DED 1DMA56109 DMA56109_PT-Ta DMA56109_IC-VCE DMA56109_hFE-IC P T I V h I T a C CE FE C 200 120 300 V = 10 V CE T = 25C a I = 800 A B 700 A 100 250 600 A 150 80 500 A 200 T = 85C a 25C 400 A 100 60 150 40C 300 A 40 100 200 A 50 20 50 100 A 0 0 0 0 40 80 120 160 200 0 2 4 6 8 10 12 0.1 1 10 100 ( ) Ambient temperature T C a Collector-emitter voltage V (V) Collector current I (mA) CE C DMA56109_I -V DMA56109_VIN-IO DMA56109_VCEsat-IC O IN V I I V V I CE(sat) C O IN IN O 10 10 100 I / I = 20 V = 5 V C B O V = 0.2 V O T = 85C a 1 10 1 25C 40C 1 10 T = 85C a T = 40C a 25C 0.1 1 2 10 85C 40C 3 10 0.01 0.1 0 0.1 1 10 100 0.4 0.8 1.2 0.1 1 10 100 Output current I (mA) Collector current I (mA) (V) Input voltage V O C IN Ver. DED 2 25C Collector-emitter saturation voltage V (V) ( ) CE(sat) Total power dissipation P mW T ( ) Output current I mA Collector current I (mA) O C Input voltage V (V) Forward current transfer ratio h IN FE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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