Product Information

DMA5610M0R

DMA5610M0R electronic component of Panasonic

Datasheet
Panasonic Bipolar Transistors - Pre-Biased COMP TRANS WBLT IN RES FLT LD 2.0x2.1mm
Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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DMA5610M0R
Panasonic

1 : USD 1.1256
10 : USD 0.7476
100 : USD 0.1862
500 : USD 0.1738
1000 : USD 0.1422
3000 : USD 0.1264
9000 : USD 0.1241
24000 : USD 0.1174
45000 : USD 0.1117
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Number Of Channels
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

DMA5610M Unit: mm Silicon PNP epitaxial planar type For digital circuits DMA2610M in SMini5 type package Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: S1 Basic Part Number Dual DRA2123J (Common emitter) 1: Base (Tr1) 4: Collector (Tr2) 2: Emitter (Common) 5: Collector (Tr1) Packaging 3: Base (Tr2) DMA5610M0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic SMini5-F3-B JEITA SC-113CB Absolute Maximum Ratings T = 25C a Code SOT-353 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 50 V (C1) (C2) CBO 5 4 Tr1 Collector-emitter voltage (Base open) V 50 V CEO Tr2 Tr1 Tr2 Collector current I 100 mA C R R 2 2 Total power dissipation P 150 mW T R R 1 1 Junction temperature T 150 C j Overall 1 2 3 Operating ambient temperature T 40 to +85 C opr (B1) (E) (B2) Storage temperature T 55 to +150 C stg R 2.2 k 1 Resistance value R 47 k 2 Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.2 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 80 FE CE C h 1 * FE h ratio V = 10 V, I = 5 mA 0.50 0.99 FE CE C (Small/Large) Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 1.2 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.4 V I(off) CE C Input resistance R 30% 2.2 +30% k 1 Resistance ratio R / R 0.037 0.047 0.057 1 2 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Ratio between 2 elements * Publication date: September 2013 Ver. DED 1DMA5610M DMA5610M_PT-Ta DMA5610M_IC-VCE DMA5610M_hFE-IC P T I V h I T a C CE FE C 200 120 300 V = 10 V CE T = 25C a I = 700 A B T = 85C a 100 250 600 A 150 500 A 25C 80 200 400 A 40C 300 A 100 60 150 200 A 40 100 50 100 A 20 50 0 0 0 0 40 80 120 160 200 0 2 4 6 8 10 12 0.1 1 10 100 ( ) Ambient temperature T C a Collector-emitter voltage V (V) Collector current I (mA) CE C DMA5610M_I -V DMA5610M_VIN-IO DMA5610M_VCEsat-IC O IN V I I V V I CE(sat) C O IN IN O 10 100 10 I / I = 20 C B V = 5 V O V = 0.2 V O T = 85C a 1 10 1 25C 1 10 T = 85C a T = 40C a 25C 40C 0.1 1 2 10 85C 40C 3 0.01 10 0.1 0.1 1 10 100 0 0.4 0.8 1.2 0.1 1 10 100 Output current I (mA) Collector current I (mA) Input voltage V (V) O C IN Ver. DED 2 25C Collector-emitter saturation voltage V (V) ( ) CE(sat) Total power dissipation P mW T ( ) Output current I mA Collector current I (mA) O C Input voltage V (V) Forward current transfer ratio h IN FE

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Panasonic may also be referenced as

Aromat
PA4
PAB
PAN
Panasonic - BSG
Panasonic - ECG
Panasonic - SSG
PANASONIC / SUNX
PANASONIC ACCESSORIES
PANASONIC BATTERIES
PANASONIC BATTERY
Panasonic Electric W
Panasonic Electric Works
Panasonic Electronic Components
Panasonic Electronic Components - Semiconductor Products
PANASONIC EW / AROMAT
PANASONIC EW/AROMAT
PANASONIC IMD
PANASONIC IND DEVICES (PIDSA)
Panasonic Industrial Automation Sales
Panasonic Industrial Devices
PANASONIC PIDSMY
Panasonic Semiconductors
PB4

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