X-On Electronics has gained recognition as a prominent supplier of DMC264000R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DMC264000R Bipolar Transistors - Pre-Biased are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DMC264000R Panasonic

DMC264000R electronic component of Panasonic
DMC264000R Panasonic
DMC264000R Bipolar Transistors - Pre-Biased
DMC264000R  Semiconductors

Images are for reference only
See Product Specifications
Part No. DMC264000R
Manufacturer: Panasonic
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
Datasheet: DMC264000R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 500
Multiples : 500
500 : USD 0.2034
1000 : USD 0.1772
1500 : USD 0.1627
3000 : USD 0.1207
6000 : USD 0.1109
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.945
10 : USD 0.6237
100 : USD 0.1555
500 : USD 0.1447
1000 : USD 0.1188
3000 : USD 0.1058
9000 : USD 0.1037
24000 : USD 0.0972
45000 : USD 0.0929
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Number Of Channels
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMC264000R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMC264000R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DMC26400 Unit: mm Silicon NPN epitaxial planar type For digital circuits Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: P5 Basic Part Number Dual DRC2144T (Individual) 1: Emitter (Tr1) 4: Emitter (Tr2) 2: Base (Tr1) 5: Base (Tr2) Packaging 3: Collector (Tr2) 6: Collector (Tr1) DMC264000R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic Mini6-G4-B JEITA SC-74 Absolute Maximum Ratings T = 25C a Code SOT-457 Parameter Symbol Rating Unit (C1) (B2) (E2) Collector-base voltage (Emitter open) V 50 V CBO 6 5 4 Tr1 Collector-emitter voltage (Base open) V 50 V CEO R Tr2 1 Collector current I 100 mA Tr1 C Tr2 Total power dissipation P 300 mW T R 1 Junction temperature T 150 C j 1 2 3 Overall (E1) (B1) (C2) Operating ambient temperature T 40 to +85 C opr Resistance value R 47 k Storage temperature T 55 to +150 C 1 stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.01 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 160 460 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 2.8 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.4 V I(off) CE C Input resistance R 30% 47 +30% k 1 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2013 Ver. FED 1DMC26400 DMC26400_IC-VCE DMC26400_hFE-IC DMC26400_PT-Ta P T I V h I T a C CE FE C 500 120 V = 10 V CE T = 25C a T = 85C a 300 100 400 I = 350 A 25C B 40C 80 300 A 300 200 250 A 60 200 A 200 150 A 40 100 100 A 100 20 50 A 0 0 0 0 2 4 6 8 10 12 0.1 1 10 100 0 40 80 120 160 200 Collector-emitter voltage V (V) Collector current I (mA) Ambient temperature T (C) CE C a DMC26400_VCEsat-IC DMC26400_I -V DMC26400_VIN-IO O IN V I I V V I CE(sat) C O IN IN O 10 100 10 I / I = 20 V = 0.2 V V = 5 V C B O O T = 85C a 1 25C 1 10 40C 1 40C 10 25C T = 85C 0.1 a 1 T = 85C a 2 10 40C 25C 0.01 3 0.1 10 0.1 1 10 100 0 0.5 1.0 1.5 2.0 0.1 1 10 100 Collector current I (mA) Output current I (mA) C (V) O Input voltage V IN Ver. FED 2 Collector-emitter saturation voltage V (V) CE(sat) ( ) Total power dissipation P mW T Output current I (mA) O Collector current I (mA) C Forward current transfer ratio h Input voltage V (V) FE IN

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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