DMC56100
Unit: mm
Silicon NPN epitaxial planar type
For digital circuits
DMC26100 in SMini5 type package
Features
High forward current transfer ratio h with excellent linearity
FE
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: P3
Basic Part Number
1: Base (Tr1) 4: Collector (Tr2)
Dual DRC2144T (Common emitter)
2: Emitter (Common) 5: Collector (Tr1)
Packaging
3: Base (Tr2)
Panasonic SMini5-F3-B
DMC561000R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
JEITA SC-113CB
Absolute Maximum Ratings T = 25C
Code SOT-353
a
Parameter Symbol Rating Unit
(C1) (C2)
Collector-base voltage (Emitter open) V 50 V 5 4
CBO
Tr1
Collector-emitter voltage (Base open) V 50 V
CEO
Tr2 Tr1 Tr2
Collector current I 100 mA
C
R
R
1
1
Total power dissipation P 150 mW
T
Junction temperature T 150 C
j
1 2 3
Overall
(B1) (E) (B2)
Operating ambient temperature T 40 to +85 C
opr
Resistance value R 47 k
1
Storage temperature T 55 to +150 C
stg
Electrical Characteristics T = 25C3C
a
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V
CBO C E
Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V
CEO C B
Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A
CBO CB E
Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A
CEO CE B
Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.01 mA
EBO EB C
Forward current transfer ratio h V = 10 V, I = 5 mA 160 460
FE CE C
1 h
*
FE
h ratio V = 10 V, I = 5 mA 0.50 0.99
FE CE C
(Small/Large)
Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V
CE(sat) C B
Input voltage (ON) V V = 0.2 V, I = 5 mA 2.8 V
I(on) CE C
Input voltage (OFF) V V = 5 V, I = 100 A 0.4 V
I(off) CE C
Input resistance R 30% 47 +30% k
1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Ratio between 2 elements
*
Publication date: December 2013 Ver. DED
1DMC56100
DMC56100_PT-Ta DMC56100_IC-VCE DMC56100_hFE-IC
P T I V h I
T a C CE FE C
500
250 120
T = 25C
a
T = 85C
a
100
200 400
I = 350 A 25C
B
300 A
40C
80
250 A
300
150
200 A
60
150 A
200
100
40
100 A
50 100
50 A
20
V = 10 V
CE
0 0 0
0 40 80 120 160 200 0 2 4 6 8 10 12 0.1 1 10 100
( )
Ambient temperature T C
Collector-emitter voltage V (V) Collector current I (mA)
a
CE C
DMC56100_I -V
DMC56100_VIN-IO
DMC56100_VCEsat-IC O IN
V I I V V I
CE(sat) C O IN IN O
10
10 100
I / I = 20
C B V = 5 V
O V = 0.2 V
O
T = 85C
a
1
10
1
40C
T = 40C
a
1
10
25C
25C
0.1 1
85C
T = 85C 2
a 10
40C
25C
3
0.01 10 0.1
0.1 1 10 100 0 0.5 1.0 1.5 2.0 0.1 1 10 100
Output current I (mA)
Collector current I (mA)
Input voltage V (V) O
C
IN
Ver. DED
2
Collector-emitter saturation voltage V (V)
( )
CE(sat) Total power dissipation P mW
T
( )
Output current I mA Collector current I (mA)
O C
Forward current transfer ratio h
Input voltage V (V)
FE
IN