DMC5610N Unit: mm Silicon NPN epitaxial planar type For digital circuits Features High forward current transfer ratio h FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: S6 Basic Part Number Dual DRC2143Z (Common emitter) 1: Base (Tr1) 4: Collector (Tr2) 2: Emitter (Common) 5: Collector (Tr1) Packaging 3: Base (Tr2) DMC5610N0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic SMini5-F3-B JEITA SC-113CB Absolute Maximum Ratings T = 25C a Code SOT-353 Parameter Symbol Rating Unit (C1) (C2) Collector-base voltage (Emitter open) V 50 V CBO 5 4 Tr1 Collector-emitter voltage (Base open) V 50 V CEO Tr2 Tr1 Tr2 Collector current I 100 mA C R R 2 2 Total power dissipation P 150 mW T R R 1 1 Junction temperature T 150 C j 1 2 3 Overall (B1) (E) (B2) Operating ambient temperature T 40 to +85 C opr R 4.7 kW Storage temperature T 55 to +150 C 1 stg Resistance value R 47 kW 2 Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 mA CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 mA CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.2 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 80 400 FE CE C 1 h * FE h ratio V = 10 V, I = 5 mA 0.50 0.99 FE CE C (Small/Large) Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 1.3 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.4 V I(off) CE C Input resistance R -30% 4.7 +30% kW 1 Resistance ratio R / R 0.08 0.10 0.12 1 2 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Ratio between 2 elements * Publication date: October 2013 Ver. DED 1DMC5610N DMC5610N IC-VCE DMC5610N PT-Ta DMC5610N hFE-IC P T I V h I T a C CE FE C 250 120 V = 10 V CE T = 25C a 400 100 200 I = 350 A T = 85C B a 300 A 25C 80 300 250 A 40C 150 200 A 60 200 100 150 A 40 100 A 100 50 20 50 A 0 0 0 0 40 80 120 160 200 0 2 4 6 8 10 12 0.1 1 10 100 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DMC5610N I -V DMC5610N VIN-IO DMC5610N VCEsat-IC O IN V I I V V I CE(sat) C O IN IN O 10 10 100 I / I = 20 C B V = 5 V O V = 0.2 V O 1 T = 85C a 10 1 25C 1 10 T = 40C a 25C 0.1 1 T = 85C a 40C 85C 2 10 40C 25C 3 10 0.01 0.1 0 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 Output current I (mA) Collector current I (mA) (V) Input voltage V O C IN Ver. DED 2 Collector-emitter saturation voltage V (V) CE(sat) Total power dissipation P (mW) T ( ) Output current I mA Collector current I (mA) O C Forward current transfer ratio h Input voltage V (V) FE IN