Doc No. TT4-EA-11716
Revision. 3
Product Standards
Transistors with Built-in Resistor
DRA2114T0L
DRA2114T0L
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
2.9
Complementary to DRC2114T 0.4 0.16
3
Features
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1 2
1.1
Marking Symbol:
LD
(0.95)(0.95)
1.9
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic Mini3-G3-B
JEITA SC-59A
Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -50 V Internal Connection
Collector current IC -100 mA
C
Total power dissipation PT 200 mW
R
1
B
Junction temperature Tj 150 C
Operating ambient temperature Topr -40 to +85 C
E
Storage temperature Tstg -55 to +150 C
Resistance
R1 10 k
value
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = -10 A, IE = 0 -50 V
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -0.1 A
Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 -0.5 A
Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -0.01 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 160 460 -
Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V
Vi(on) VCE = -0.2 V, IC = -5 mA -1.2 V
Input voltage
Vi(off) VCE = -5 V, IC = -100 A -0.4 V
Input resistance R1 -30% 10 +30% k
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page 1of 3
Established : 2009-10-29
Revised : 2014-01-28
1.5
2.8Doc No. TT4-EA-11716
Revision. 3
Product Standards
Transistors with Built-in Resistor
DRA2114T0L
Technical Data ( reference )
PT - Ta
IC - VCE
250
-0.12
Ta = 25 C
IB = -800 A -700 A
-0.1
-600 A
200
-500 A
-0.08
-400 A
150
-0.06 -300 A
100
-200 A
-0.04
50 -100 A
-0.02
0 -0
0 20 40 60 80 100 120 140 160 180 200 -0 -2 -4 -6 -8 -10 -12
Ambient temperature Ta (C) Collector-emitter voltage VCE (V)
hFE - IC VCE(sat) - IC
-10
500
IC/IB = 20
VCE = -10 V
450
Ta = 85 C
400
350
-1
25 C
300
250
25 C
Ta = 85 C
200
-0.1
150
100
-40 C
-40 C
50
0
-0.01
-0.0001 -0.001 -0.01 -0.1
-0.0001 -0.001 -0.01 -0.1
Collector current IC (A)
Collector current IC (A)
Io - VIN VIN - Io
-1.0E-02 -100
Vo = -5 V
Vo = -0.2 V
-1.0E-03
Ta = 85 C
-10
-40 C
25 C
Ta = -40 C
25 C
-1.0E-04
-1
-1.0E-05
85 C
-1.0E-06 -0.1
-0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -0.0001 -0.001 -0.01 -0.1
Input voltage VIN (V) Output current Io (A)
Page 2 of 3
Established : 2009-10-29
Revised : 2014-01-28
Output current Io (A) Forward current transfer ratio hFE
Total power dissipation PT (mW)
Input voltage VIN (V) Collector-emitter saturation voltage
Collector current IC (A)
VCE(sat) (V)