Doc No. TT4-EA-12302
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRA2533Q0L
DRA2533Q0L
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
2.9
0.4 0.16
Features
3
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1 2
Marking Symbol:
SU
1.1
(0.95)(0.95)
Packaging
1.9
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic Mini3-G3-B
JEITA SC-59A
Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -50 V Internal Connection
Collector current IC -500 mA
C
R
1
Total power dissipation PT 200 mW
B
R
Junction temperature Tj 150 C
2
E
Operating ambient temperature Topr -40 to +85 C
Storage temperature Tstg -55 to +150 C
k
Resistance R1 3.1
4.6 k
value R2
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
V
Collector-base voltage (Emitter open) VCBO IC = -10 A, IE = 0 -50
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -1 A
Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 -1 A
Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -2 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -100 mA 50 -
Collector-emitter saturation voltage VCE(sat) IC = -100 mA, IB = -5 mA -0.25 V
Vi(on) VCE = -0.2 V, IC = -50 mA -2.7 V
Input voltage
Vi(off) VCE = -5 V, IC = -100 A -0.5 V
Input resistance R1 -30% 3.1 +30%
k
Resistance ratio R1/R2 0.53 0.67 0.81 -
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Note) 1.
Page 1of 3
Established : 2010-02-04
Revised : 2014-01-23
1.5
2.8Doc No. TT4-EA-12302
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRA2533Q0L
Technical Data ( reference )
PT - Ta
IC - VCE
250
-0.25
Ta = 25
IB= -1.2 mA
200 -0.2
-1.0 mA
150
-0.15
-0.8 mA
100 -0.1
-0.6 mA
-0.4 mA
50 -0.05
-0.2 mA
0 -0
0 20 40 60 80 100 120 140 160 180 200 -0 -2 -4 -6 -8 -10 -12
Ambient temperature Ta () Collector-emitter voltage VCE (V)
hFE - IC VCE(sat) - IC
-10
250
IC/IB = 20
VCE = -10 V
200
Ta = 85
-1
150
25
25
Ta = 85
100
-0.1
-40
50
-40
0
-0.01
-0.0001 -0.001 -0.01 -0.1 -1
-0.001 -0.01 -0.1 -1
Collector current IC (A)
Collector current IC (A)
Io - VIN VIN - Io
-1.0E-02 -100
Vo = -5 V
Vo = -0.2 V
Ta = 85
-1.0E-03
-10
Ta = -40 25
-40
-1.0E-04
25
-1
-1.0E-05
85
-1.0E-06 -0.1
-0 -0.5 -1 -1.5 -2
-0.001 -0.01 -0.1 -1
Input voltage VIN (V) Output current Io (A)
Page 2 of 3
Established : 2010-02-04
Revised : 2014-01-23
Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW)
Input voltage VIN (V)
Collector-emitter saturation voltage
Collector current IC (A)
VCE(sat) (V)