Doc No. TT4-EA-11666 Revision. 2 Product Standards Transistors with Built-in Resistor DRA3113Z0L DRA3113Z0L Silicon PNP epitaxial planar type Unit: mm For digital circuits 1.2 Complementary to DRC3113Z 0.3 0.13 DRA9113Z in SSSMini3 type package 3 Features Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 0.2 0.52 Marking Symbol: L1 (0.4) (0.4) 0.8 Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic SSSMini3-F2-B JEITA SC-105AA Absolute Maximum Ratings Ta = 25 C Code SOT-723 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Internal Connection Collector current IC mA -100 Total power dissipation PT 100 mW C R 1 B Junction temperature Tj 150 C R 2 Operating ambient temperature Topr -40 to +85 C E Storage temperature Tstg -55 to +150 C Resistance R1 1 k R2 10 k value Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = -10 A, IE = 0 -50 V Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 -0.5 A Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -1.5 mA Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 30 - Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V Vi(on) VCE = -0.2 V, IC = -5 mA -1.0 V Input voltage Vi(off) VCE = -5 V, IC = -100 A -0.4 V Input resistance R1 -30% 1 +30% k Resistance ratio R1/R2 0.08 0.10 0.12 - Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Note) 1. Page 1of 3 Established : 2009-10-23 Revised : 2014-01-22 0.8 1.2Doc No. TT4-EA-11666 Revision. 2 Product Standards Transistors with Built-in Resistor DRA3113Z0L Technical Data ( reference ) PT - Ta IC - VCE 125 -0.12 Ta = 25 IB = -800 A -0.1 -700 A 100 -600 A -0.08 -500 A 75 -400 A -0.06 50 -300 A -0.04 -200 A 25 -0.02 -100 A 0 -0 0 20 40 60 80 100 120 140 160 180 200 -0 -2 -4 -6 -8 -10 -12 Ambient temperature Ta () Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC -10 250 VCE = -10 V IC/IB = 20 200 Ta = 85 -1 150 Ta = 85 25 25 100 -0.1 -40 50 -40 0 -0.01 -0.0001 -0.001 -0.01 -0.1 -0.0001 -0.001 -0.01 -0.1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io -1.0E-02 -100 Vo = -5 V Vo = -0.2 V Ta = 85 -1.0E-03 -10 25 Ta = -40 25 -1.0E-04 -1 -1.0E-05 -40 85 -1.0E-06 -0.1 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -0.0001 -0.001 -0.01 -0.1 Input voltage VIN (V) Output current Io (A) Page 2 of 3 Established : 2009-10-23 Revised : 2014-01-22 Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW) Collector-emitter saturation voltage Collector current IC (A) Input voltage VIN (V) VCE(sat) (V)