Product Information

DRA3114T0L

DRA3114T0L electronic component of Panasonic

Datasheet
Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 1.2x1.2mm
Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

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Availability Price Quantity
0 - WHS 1

MOQ : 10000
Multiples : 10000

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DRA3114T0L
Panasonic

10000 : USD 0.1025
20000 : USD 0.097
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

Doc No. TT4-EA-11668 Revision. 2 Product Standards Transistors with Built-in Resistor DRA3114T0L DRA3114T0L Silicon PNP epitaxial planar type Unit: mm For digital circuits 1.2 Complementary to DRC3114T 0.3 0.13 DRA9114T in SSSMini3 type package 3 Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 0.2 0.52 Marking Symbol: LD (0.4) (0.4) 0.8 Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic SSSMini3-F2-B JEITA SC-105AA Absolute Maximum Ratings Ta = 25 C Code SOT-723 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Internal Connection Collector current IC -100 mA C Total power dissipation PT 100 mW R 1 B Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C E Storage temperature Tstg -55 to +150 C Resistance R1 10 k value Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit V Collector-base voltage (Emitter open) VCBO IC = -10 A, IE = 0 -50 Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 -0.5 A Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -0.01 mA Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 160 460 - Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V Vi(on) VCE = -0.2 V, IC = -5 mA -1.2 V Input voltage Vi(off) VCE = -5 V, IC = -100 A -0.4 V Input resistance R1 -30% 10 +30% k Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Page 1of 3 Established : 2009-10-23 Revised : 2014-02-07 0.8 1.2Doc No. TT4-EA-11668 Revision. 2 Product Standards Transistors with Built-in Resistor DRA3114T0L Technical Data ( reference ) PT - Ta IC - VCE 125 -0.12 Ta = 25 IB = -800 A -700 A -600 A -0.1 100 -500 A -0.08 -400 A 75 -300 A -0.06 50 -200 A -0.04 -100 A 25 -0.02 0 -0 0 20 40 60 80 100 120 140 160 180 200 -0 -2 -4 -6 -8 -10 -12 Ambient temperature Ta () Collector-emitter voltage VCE (V) VCE(sat) - IC hFE - IC -10 500 IC/IB = 20 VCE = -10 V 450 Ta = 85 400 350 -1 25 300 250 25 Ta = 85 200 -0.1 150 -40 100 -40 50 0 -0.01 -0.0001 -0.001 -0.01 -0.1 -0.0001 -0.001 -0.01 -0.1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io -1.0E-02 -100 Vo = -5 V Vo = -0.2 V -1.0E-03 Ta = 85 -10 25 Ta = -40 25 -1.0E-04 -40 -1 -1.0E-05 85 -1.0E-06 -0.1 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -0.0001 -0.001 -0.01 -0.1 Input voltage VIN (V) Output current Io (A) Page 2 of 3 Established : 2009-10-23 Revised : 2014-02-07 Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW) Collector-emitter saturation voltage Input voltage VIN (V) Collector current IC (A) VCE(sat) (V)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Panasonic Electric Works
Panasonic Electronic Components
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PANASONIC EW/AROMAT
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PANASONIC IND DEVICES (PIDSA)
Panasonic Industrial Automation Sales
Panasonic Industrial Devices
PANASONIC PIDSMY
Panasonic Semiconductors
PB4

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