Doc No. TT4-EA-11683
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRA3144V0L
DRA3144V0L
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
1.2
Complementary to DRC3144V
0.3 0.13
DRA9144V in SSSMini3 type package
3
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
12
0.2 0.52
Marking Symbol:
LJ
(0.4) (0.4)
0.8
Packaging
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic SSSMini3-F2-B
JEITA SC-105AA
Absolute Maximum Ratings Ta = 25 C Code SOT-723
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -50 V Internal Connection
Collector current IC mA
-100
Total power dissipation PT 100 mW C
R
1
B
Junction temperature Tj 150 C
R
2
Operating ambient temperature Topr -40 to +85 C
E
Storage temperature Tstg -55 to +150 C
Resistance R1 47 k
R2 10 k
value
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO
IC = -10 A, IE = 0 -50 V
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -0.1 A
Collector-emitter cutoff current (Base open) ICEO
VCE = -50 V, IB = 0 -0.5 A
Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -0.2 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 30 -
Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V
Vi(on) VCE = -0.2 V, IC = -5 mA -6.3 V
Input voltage
Vi(off) VCE = -5 V, IC = -100 A -1.9 V
Input resistance R1 -30% 47 +30% k
Resistance ratio R1/R2 3.7 4.7 5.7 -
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Note) 1.
Page 1of 3
Established : 2009-10-23
Revised : 2014-02-18
0.8
1.2Doc No. TT4-EA-11683
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRA3144V0L
Technical Data ( reference )
PT - Ta
IC - VCE
125
-0.12
Ta = 25
IB = -600 A
-0.1
100
-0.08
-500 A
75
-400 A
-0.06
-300 A
50
-0.04
-200 A
25
-0.02
-100 A
0 -0
0 20 40 60 80 100 120 140 160 180 200 -0 -2 -4 -6 -8 -10 -12
Ambient temperature Ta () Collector-emitter voltage VCE (V)
hFE - IC VCE(sat) - IC
-10
200
IC/IB = 20
VCE = -10 V
Ta = 85
150
-1
25
100
Ta = 85 25
-40 -0.1
50
-40
0
-0.01
-0.0001 -0.001 -0.01 -0.1
-0.0001 -0.001 -0.01 -0.1
Collector current IC (A)
Collector current IC (A)
Io - VIN VIN - Io
-1.0E-02 -100
Vo = -5 V
Vo = -0.2 V
Ta = 85
25
-1.0E-03
Ta = -40
-10
-40
25
-1.0E-04
-1
85
-1.0E-05
-1.0E-06 -0.1
-0 -1 -2 -3 -4 -5
-0.0001 -0.001 -0.01 -0.1
Input voltage VIN (V) Output current Io (A)
Page 2 of 3
Established : 2009-10-23
Revised : 2014-02-18
Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW)
Input voltage VIN (V) Collector-emitter saturation voltage
Collector current IC (A)
VCE(sat) (V)