Doc No. TT4-EA-11576 Revision. 3 Product Standards Transistors with Built-in Resistor DRA5124E0L DRA5124E0L Silicon PNP epitaxial planar type Unit: mm For digital circuits 2.0 Complementary to DRC5124E 0.3 0.13 DRA2124E in SMini3 type package 3 Features Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 0.9 Marking Symbol: LE (0.65)(0.65) 1.3 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic SMini3-F2-B JEITA SC-85 Absolute Maximum Ratings Ta = 25 C Code Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Internal Connection Collector current IC -100 mA Total power dissipation PT 150 mW C R 1 B Junction temperature Tj 150 C R 2 Operating ambient temperature Topr -40 to +85 C E Storage temperature Tstg -55 to +150 C Resistance R1 22 k R2 22 k value Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = -10 A, IE = 0 -50 V Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 -0.5 A Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -0.2 mA Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 60 - Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V Vi(on) VCE = -0.2 V, IC = -5 mA -2.6 V Input voltage Vi(off) VCE = -5 V, IC = -100 A -0.8 V Input resistance R1 -30% 22 +30% k Resistance ratio R1/R2 0.8 1.0 1.2 - Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Page 1of 3 Established : 2009-10-14 Revised : 2014-02-21 1.25 2.1Doc No. TT4-EA-11576 Revision. 3 Product Standards Transistors with Built-in Resistor DRA5124E0L Technical Data ( reference ) IC - VCE PT - Ta 200 -0.12 Ta = 25 IB=-600 A -0.1 150 -500 A -0.08 -400 A 100 -0.06 -300 A -0.04 -200 A 50 -0.02 -100 A 0 -0 0 20 40 60 80 100 120 140 160 180 200 -0 -2 -4 -6 -8 -10 -12 Ambient temperature Ta () Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC -10 250 IC/IB = 20 VCE = -10 V 200 Ta = 85 -1 150 25 25 Ta = 85 100 -0.1 -40 50 -40 0 -0.01 -0.0001 -0.001 -0.01 -0.1 -0.0001 -0.001 -0.01 -0.1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io -1.0E-02 -100 Vo = -5 V Vo = -0.2 V Ta = 85 -1.0E-03 -10 25 Ta = -40 -1.0E-04 25 -1 -1.0E-05 85 -40 -1.0E-06 -0.1 -0 -0.5 -1 -1.5 -2 -0.0001 -0.001 -0.01 -0.1 Input voltage VIN (V) Output current Io (A) Page 2 of 3 Established : 2009-10-14 Revised : 2014-02-21 Output current Io (A) Total power dissipation PT (mW) Forward current transfer ratio hFE Collector-emitter saturation voltage Collector current IC (A) Input voltage VIN (V) VCE(sat) (V)