Doc No. TT4-EA-11753
Revision. 3
Product Standards
Transistors with Built-in Resistor
DRC2143X0L
DRC2143X0L
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
2.9
Complementary to DRA2143X 0.4 0.16
3
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1 2
1.1
Marking Symbol:
N6
(0.95)(0.95)
1.9
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic Mini3-G3-B
JEITA SC-59A
Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V Internal Connection
Collector current IC 100 mA
C
Total power dissipation PT 200 mW
R
1
B
Junction temperature Tj 150 C
R
2
Operating ambient temperature Topr -40 to +85 C
E
Storage temperature Tstg -55 to +150 C
Resistance R1 4.7 k
R2 10 k
value
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open)
VCBO IC = 10 A, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 A
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5 A
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 1.0 mA
Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 30 -
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V
Vi(on) VCE = 0.2 V, IC = 5 mA 1.7 V
Input voltage
Vi(off) VCE = 5 V, IC = 100 A 0.6 V
Input resistance R1 -30% 4.7 +30% k
Resistance ratio R1/R2 0.37 0.47 0.57 -
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Note) 1.
Page 1of 3
Established : 2009-10-30
Revised : 2014-03-14
1.5
2.8Doc No. TT4-EA-11753
Revision. 3
Product Standards
Transistors with Built-in Resistor
DRC2143X0L
Technical Data ( reference )
PT - Ta
IC - VCE
250
0.12
Ta = 25 IB = 500 A
200
0.1
450 A
400 A
150 0.08
300 A
250 A
0.06
100
250 A
200 A
0.04
50
150 A
0.02
100 A
0
0
0 20 40 60 80 100 120 140 160 180 200
0246 8 10 12
Ambient temperature Ta ()
Collector-emitter voltage VCE (V)
hFE - IC VCE(sat) - IC
10
300
IC/IB = 20
VCE = 10 V
250
Ta = 85
1
200
25
25
150
Ta = 85
100
0.1
-40
50
-40
0
0.01
0.0001 0.001 0.01 0.1
0.0001 0.001 0.01 0.1
Collector current IC (A)
Collector current IC (A)
Io - VIN VIN - Io
1.E-02
100
Vo = 5 V
Vo = 0.2 V
Ta = 85
1.E-03
10
25 -40
Ta = -40
25
1.E-04
1
1.E-05
85
1.E-06 0.1
0 0.5 1 1.5
0.0001 0.001 0.01 0.1
Input voltage VIN (V) Output current Io (A)
Page 2 of 3
Established : 2009-10-30
Revised : 2014-03-14
Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW)
Collector current IC (A)
Collector-emitter saturation voltage
Input voltage VIN (V)
VCE(sat) (V)