Doc No. TT4-EA-11754 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2143Y0L DRC2143Y0L Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.9 Complementary to DRA2143Y 0.4 0.16 Features 3 High forward current transfer ratio hFE Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 Marking Symbol: N7 1.1 (0.95)(0.95) Packaging 1.9 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic Mini3-G3-B JEITA SC-59A Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Internal Connection Collector current IC mA 100 C R 1 Total power dissipation PT 200 mW B Junction temperature Tj 150 C R 2 Operating ambient temperature Topr -40 to +85 C E Storage temperature Tstg -55 to +150 C Resistance R1 4.7 k 22 value R2 k Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 A Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.4 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 60 200 - Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V Vi(on) VCE = 0.2 V, IC = 5 mA 1.2 V Input voltage Vi(off) VCE = 5 V, IC = 100 A 0.5 V Input resistance R1 -30% 4.7 +30% k Resistance ratio R1/R2 0.17 0.21 0.27 - Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Note) 1. Page 1of 3 Established : 2009-10-30 Revised : 2014-03-07 1.5 2.8Doc No. TT4-EA-11754 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2143Y0L Technical Data ( reference ) PT - Ta IC - VCE 250 0.12 Ta = 25 C 0.1 200 IB = 350 A 0.08 300 A 150 250 A 0.06 200 A 100 0.04 150 A 50 100 A 0.02 50 A 0 0 0 20 40 60 80 100 120 140 160 180 200 02 46 8 10 12 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC 10 350 IC/IB = 20 VCE = 10 V 300 250 1 Ta = 85 C 200 25 C Ta = 85 C 25 C 150 0.1 100 -40 C 50 -40 C 0 0.01 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io 1.E-02 100 Vo = 5 V Vo = 0.2 V Ta = 85 C 1.E-03 10 25 C Ta = -40 C 25 C 1.E-04 -40 C 1 1.E-05 85 C 1.E-06 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 Input voltage VIN (V) Output current Io (A) Page 2 of 3 Established : 2009-10-30 Revised : 2014-03-07 Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW) Input voltage VIN (V) Collector-emitter saturation voltage Collector current IC (A) VCE(sat) (V)