Doc No. TT4-EA-12544 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2614T0L DRC2614T0L Silicon NPN epitaxial planar type Unit: mm For digital circuits / Muting 2.9 0.4 0.16 Features 3 Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 Marking Symbol: VT 1.1 (0.95)(0.95) Packaging 1.9 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic Mini3-G3-B JEITA SC-59A Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Internal Connection Emitter-base voltage (Collector open) VEBO 5 V C Collector current IC 600 mA R 1 B Total power dissipation PT 200 mW Junction temperature Tj 150 C E Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C Resistance value R1 10 k 1of 4 Page Established : 2010-04-22 Revised : 2014-03-25 1.5 2.8Doc No. TT4-EA-12544 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2614T0L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 30 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 A, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 30 V, IE = 0 1 A Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 1 A *1 hFE VCE = 5 V, IC = 50 mA 100 600 - Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) IC = 50 mA, IB = 2.5 mA 80 mV Input resistance R1 -30% 10 +30% k *2 Ron 2.5 On resistanc VI = 7 V, RL = 1 k , f = 1 kHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Pulse Test *2 On resistance test circuit Page 2of 4 Established : 2010-04-22 Revised : 2014-03-25