Doc No. TT4-EA-11608
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRC5143Y0L
DRC5143Y0L
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
2.0
Complementary to DRA5143Y
0.3 0.13
DRC2143Y in SMini3 type package
3
Features
High forward current transfer ratio hFE
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
12
0.9
Marking Symbol:
N7
(0.65)(0.65)
1.3
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic SMini3-F2-B
JEITA SC-85
Absolute Maximum Ratings Ta = 25 C Code
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V Internal Connection
Collector current IC 100 mA
C
R
Total power dissipation PT 150 mW
1
B
Junction temperature Tj 150 C
R
2
Operating ambient temperature Topr -40 to +85 C
E
Storage temperature Tstg -55 to +150 C
Resistance R1 4.7 k
R2 22
value k
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO
IC = 10 A, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 A
Collector-emitter cutoff current (Base open) ICEO
VCE = 50 V, IB = 0 0.5 A
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.4 mA
Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 60 200 -
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V
Vi(on) VCE = 0.2 V, IC = 5 mA 1.2 V
Input voltage
Vi(off) VCE = 5 V, IC = 100 A 0.5 V
Input resistance R1 -30% 4.7 +30% k
Resistance ratio R1/R2 0.17 0.21 0.27 -
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Note) 1.
Page 1of 3
Established : 2009-10-15
Revised : 2014-03-13
1.25
2.1Doc No. TT4-EA-11608
Revision. 2
Product Standards
Transistors with Built-in Resistor
DRC5143Y0L
Technical Data ( reference )
PT - Ta
IC - VCE
200
0.12
Ta = 25 C
0.1 IB = 350 A
150
0.08
300 A
250 A
100
0.06
200 A
0.04
150 A
50
100 A
0.02
50 A
0 0
0 20 40 60 80 100 120 140 160 180 200
02 46 8 10 12
Ambient temperature Ta (C) Collector-emitter voltage VCE (V)
hFE - IC VCE(sat) - IC
10
350
IC/IB = 20
VCE = 10 V
300
250
1
Ta = 85 C
200
25 C
Ta = 85 C 25 C
150
0.1
100
-40 C
50
-40 C
0
0.01
0.0001 0.001 0.01 0.1
0.0001 0.001 0.01 0.1
Collector current IC (A)
Collector current IC (A)
Io - VIN VIN - Io
1.E-02 100
Vo = 5 V
Vo = 0.2 V
Ta = 85 C
1.E-03
10
25 C
-40 C Ta = -40 C
25 C
1.E-04
1
1.E-05
85 C
1.E-06 0.1
0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1
Input voltage VIN (V) Output current Io (A)
Page 2 of 3
Established : 2009-10-15
Revised : 2014-03-13
Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW)
Input voltage VIN (V)
Collector-emitter saturation voltage
Collector current IC (A)
VCE(sat) (V)