Doc No. TT4-EA-11533
Revision. 3
Product Standards
Transistors with Built-in Resistor
DRC9114E0L
DRC9114E0L
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
1.6
Complementary to DRA9114E
0.26 0.13
DRC5114E in SSMini3 type package
3
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
12
0.7
Marking Symbol:
NB
(0.5)(0.5)
1.0
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic SSMini3-F3-B
JEITA SC-89
Absolute Maximum Ratings Ta = 25 C Code SOT-490
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V Internal Connection
Collector current IC 100 mA
C
Total power dissipation PT 125 mW
R
1
B
Junction temperature Tj 150 C
R
2
Operating ambient temperature Topr -40 to +85 C
E
Storage temperature Tstg -55 to +150 C
Resistance R1 10 k
R2 10 k
value
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO
IC = 10 A, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 A
Collector-emitter cutoff current (Base open) ICEO
VCE = 50 V, IB = 0 0.5 A
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.5 mA
Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 35 -
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V
Vi(on) VCE = 0.2 V, IC = 5 mA 2.1 V
Input voltage
Vi(off) VCE = 5 V, IC = 100 A 0.8 V
Input resistance R1 -30% 10 +30% k
Resistance ratio R1/R2 0.8 1.0 1.2 -
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Note) 1.
Page 1of 3
Established : 2009-10-13
Revised : 2014-03-05
0.85
1.6Doc No. TT4-EA-11533
Revision. 3
Product Standards
Transistors with Built-in Resistor
DRC9114E0L
Technical Data ( reference )
PT - Ta
IC - VCE
150
0.12
Ta = 25
125
IB = 350 A
0.1
100
300 A
0.08
75 250 A
0.06
200 A
50
0.04
150 A
25
0.02
100 A
0
50 A
0
0 20 40 60 80 100 120 140 160 180 200
0246 8 10 12
Ambient temperature Ta ()
Collector-emitter voltage VCE (V)
hFE - IC VCE(sat) - IC
10
350
IC/IB = 20
VCE = 10 V
300
Ta = 85
250
1
25
200
25
Ta = 85
150
0.1
100
-40
50
-40
0
0.01
0.0001 0.001 0.01 0.1
0.0001 0.001 0.01 0.1
Collector current IC (A)
Collector current IC (A)
Io - VIN VIN - Io
1.E-02
100
Vo = 5 V
Vo = 0.2 V
Ta = 85
1.E-03
10
-40
25
Ta = -40
25
1.E-04
1
1.E-05
85
1.E-06 0.1
0 0.5 1 1.5 2
0.0001 0.001 0.01 0.1
Input voltage VIN (V) Output current Io (A)
Page 2 of 3
Established : 2009-10-13
Revised : 2014-03-05
Output current Io (A) Forward current transfer ratio hFE Total power dissipation PT (mW)
Collector current IC (A)
Collector-emitter saturation voltage
Input voltage VIN (V)
VCE(sat) (V)