LN55

Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm 4.5 0.3 4.2 0.3 For optical control systems 3.5 0.2 2.3 1.9 Features High-power output, high-efficiency : P = 3.5 mW (typ.) O Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : = 950 nm (typ.) 2-0.98 0.2 P 2-0.45 0.15 High-speed modulation capability 0.45 0.15 Absolute Maximum Ratings (Ta = 25C) 2.54 1.2 Parameter Symbol Ratings Unit R1.75 Power dissipation P 75 mW D Forward current (DC) I 50 mA F * Pulse forward current I 1A 12 FP 1: Cathode Reverse voltage (DC) V 3V R 2: Anode Operating ambient temperature T 25 to +85 C opr Storage temperature T 30 to +100 C stg * f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Symbol Conditions min typ max Unit Radiant power P I = 50mA 1.8 3.5 mW O F Peak emission wavelength I = 50mA 950 nm P F Spectral half band width I = 50mA 50 nm F Forward voltage (DC) V I = 50mA 1.5 V F F Reverse current (DC) I V = 3V 10 A R R Capacitance between pins C V = 0V, f = 1MHz 50 pF t R Half-power angle The angle in which radiant intencity is 50% 35 deg. I Ta I Duty cycle I V F FP F F 60 80 2 Ta = 25C 10 Ta = 25C 70 50 10 60 40 50 1 30 40 1 10 30 20 20 2 10 10 10 3 0 10 0 2 1 2 25 0 20406080 100 10 10 1 10 10 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage V (V) F 1 Allowable forward current I (mA) F Pulse forward current I (A) FP 12.8 min. 10.0 min. 2.8 Forward current I (mA) F 1.8 4.8 0.3 1.0 2.4 2.4 Not solderedInfrared Light Emitting Diodes LN55 I V P I P I FP F O F O FP 4 4 10 120 10 t = 10s w Ta = 25C Duty Cycle = 0.1% Ta = 25C 100 3 10 (1) 3 10 80 2 (2) 10 (3) 2 (4) 60 10 (5) 10 40 t = 10s w 10 (1) f = 100Hz 1 (2) f = 21kHz 20 (3) f = 42kHz (4) f = 60kHz (5) DC Ta = 25C 1 10 0 1 2 3 4 013524 0 10 20 30 40 50 60 10 10 10 10 Forward voltage V (V) Forward current I (mA) Pulse forward current I (mA) F F FP V Ta P Ta Ta F O P 3 1.6 10 1000 I = 50mA I = 50mA F F 980 1.2 I = 50mA F 2 10 960 10mA 0.8 940 10 0.4 920 0 1 900 40 0 40 80 120 40 0 40 80 120 40 0 40 80 120 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Ambient temperature Ta (C ) Spectral characteristics Directivity characteristics Frequency characteristics 0 10 20 2 100 10 Ta = 25C 100 90 80 80 30 10 70 60 60 40 50 1 40 50 40 30 60 20 1 70 10 20 80 90 2 0 10 2 3 860 900 940 980 1020 1060 1100 1 10 10 10 Wavelength (nm) Frequency f (kHz) 2 Relative radiant intensity (%) Forward voltage V (V) Pulse forward current I (mA) F FP Relative radiant power P Relative radiant power P O O Relative radiant intensity(%) Modulation output Peak emission wavelength (nm) Relative radiant power P P O