Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF MTMC8E2A0LBF Gate Resistor installed Dual N-Channel MOS Typ Unit: mm 2.9 For lithium-ion secondary battery protection circuit 0.3 0.16 8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ. = 15 m (VGS =4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 234 (0.81) 0.65 Marking Symbol: 4B 1. Source 5. Drain 2. Gate 6. Drain Packaging 3. Source 7. Drain Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 4. Gate 8. Drain Panasonic WMini8-F1 JEITA SC-115 Code Internal Connection Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit (D) (D) (D) (D) Drain-source Voltage VDS 20 V 8 7 6 5 12 FET1 Gate-source Voltage VGS V FET2 Drain current ID 7.0 A Peak drain current IDp 42 A FET 1 FET 2 *1 1.0 PD1 Rg Rg *1,2 Total power dissipation 1.2 W PD2 *3 0.4 PD3 Overall Channel temperature Tch 150 C Operating ambient temperature Topr -40 to + 85 C 1 2 34 (S1) (G1) (S2) (G2) Storage temperature Tstg -55 to +150 C Note) *1 Glass epoxy board: 25.4 mm 25.4 mm 0.8 mm Copper foil 2 of the drain portion should have a area of 300 mm or more PD absolute maximum rating without a heat shink: 400 mW Pin Name 1. Source 5. Drain *2 t = 10 s *3 Stand-alone (without the board) 2. Gate 6. Drain 3. Source 7. Drain 4. Gate 8. Drain Resistance 1 Rg k Value Page 1 of 6 Established : 2010-01-06 Revised : 2013-09-02 2.4 2.8Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF Electrical Characteristics Ta = 25 C 3C Parameter Symbol Conditions Min Typ Max Unit Drain-source surrender voltage VDSS ID = 1.0 mA, VGS = 0 20 V Drain-source cutoff current IDSS VDS = 20 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 8.0 V, VDS = 0 10 A Gate threshold voltage Vth ID = 1.0 mA, VDS = 10 V 0.40 0.85 1.30 V RDS(ON)1 ID = 2.0 A, VGS = 4.5 V 15 21 m m Drain-source ON resistance RDS(ON)2 ID = 2.0 A, VGS = 3.7 V 18 25 RDS(ON)3 ID = 2.0 A, VGS = 2.5 V 22 33 m Forward transfer admittance Yfs ID = 1.0 A, VDS = 10 V 3.0 S Short-circuit input capacitance (Common source) Ciss 1450 pF Short-circuit output capacitance (Common source) VDS = 10 V, VGS = 0, f = 1 MHz Coss 100 pF Reverse transfer capacitance (Common source) Crss 90 pF *1 td(on) VDD = 10 V, VGS = 0 V to 4 V 0.33 s Turn-on delay time *1 tr ID = 1.0 A 0.70 s Rise time *1 td(off) VDD = 10 V, VGS = 4 V to 0 V 4.0 s Turn-off delay time *1 tf ID = 1.0 A 2.0 s Fall time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2of 6 Established : 2010-01-06 Revised : 2013-09-02