X-On Electronics has gained recognition as a prominent supplier of BAV199W_R1_00001 Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. BAV199W_R1_00001 Small Signal Switching Diodes are a product manufactured by Panjit. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

BAV199W_R1_00001 Panjit

BAV199W_R1_00001 electronic component of Panjit
BAV199W_R1_00001 Panjit
BAV199W_R1_00001 Small Signal Switching Diodes
BAV199W_R1_00001  Semiconductors

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Part No. BAV199W_R1_00001
Manufacturer: Panjit
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 100V,Small Signal Switching Diodes,SOT-323,4A
Datasheet: BAV199W_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1263 ea
Line Total: USD 0.13 
Availability - 5503
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5503
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.1263
10 : USD 0.0788
100 : USD 0.0487
500 : USD 0.036
1000 : USD 0.0276
3000 : USD 0.0209
6000 : USD 0.0198
9000 : USD 0.0176
24000 : USD 0.0176

2876
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.0798
10 : USD 0.0546
100 : USD 0.0448
250 : USD 0.0406
500 : USD 0.0378

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAV199W_R1_00001 from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV199W_R1_00001 and other electronic components in the Small Signal Switching Diodes category and beyond.

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BAV170W/BAV199W SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE POWER 200mWatt VOLTAGE 100 Volt FEATURES Suface mount package ideally suited for automatic insertion. Very low leakage current. 2pA typical at VR=75V. Low capacitance. 4pF max at VR=0V, f=1MHz Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case : SOT-323 plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx weight : 0.00018 ounces, 0.005 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Symbol BAV170W BAV199W Unit Marking code - P3 PB - Reverse voltage V 75 V R Peak reverse voltage V 100 V RM Continuous forward current I 0.2 A F Non-repetitive peak forward surge current at t=1 s I 4 A FSM Power dissipation (Note 1) P 200 mW TOT o Thermal resistance, junction to ambient (Note 1) R 625 C/W JA o Junction temperature range T -55 to +150 C J o Storage temperature range T -55 to +150 C STG Common Circuit figure - Series - Cathode COMMON CATHODE SERIES 3 3 1 2 2 NOTE : 1 1. FR-4 Board = 70 x 60 x 1mm. FIG.16(TOP VIEW) FIG.17(TOP VIEW) October 6,2017-REV.01 PAGE . 1BAV170W/BAV199W O ELECTRICAL CHARACTERISTICS (each diode) (TA=25 C, unless otherwise noted) Parameter Symbol Test C ondition Min. Typ. Max. Units Reverse Breakdown Voltage V (BR) IR=100 A75--V V R=75V - 0.002 5 Reverse Current I R nA o V R=75V,TJ=150 C - 8 80 IF=1mA - - 0.9 IF=10mA - - 1 Forward Voltage V F V IF=50mA - - 1.1 IF=150mA - - 1.25 Total C apacitance C T V R=0V, f=1MH Z -- 2 pF Reverse Recovery Time TRR IF=IR=10mA, R L=100 -- 3 s CHARACTERISTIC CURVES (each diode) 1000 10 100 1.0 O TA=-25 C 10 0.1 VR=75V O T=A 75C 1.0 0.01 O T=A 25C O TA=125 C 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 VF, Forward Voltage (V) Tj, Junction Temperature (Deg C) Fig. 1-Reverse Leakage vs. Junction Temperature Fig. 2-Forward Current vs. Forward Voltage 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20406080 100 VR, Reverse Voltage (V) Fig. 3- Total capacitance vs. Reverse Voltage October 6,2017-REV.01 PAGE . 2 IR, Reverse Leakage(nA) CT, Total Capacitance (pF) IF, Forward current (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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