PPJA3412-AU 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage 20 V Current 4.1A Features R , V 4.5V, I 4.1A<56m DS(ON) GS D R , V 2.5V, I 2.8A<68m DS(ON) GS D R , V 1.8V, I 1.5A<95m DS(ON) GS D Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 20 DS V Gate-Source Voltage V +12 GS Continuous Drain Current I 4.1 D A Pulsed Drain Current I 16.4 DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25 C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal Resistance (Note 3) o R 100 JA - Junction to Ambient C/W June 30,2017-REV.01 Page 1 PPJA3412-AU o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 20 - - DSS GS D V Gate Threshold Voltage V V =V , I =250uA 0.4 0.66 1.2 GS(th) DS GS D V =4.5V, I =4.1A - 41 56 GS D Drain-Source On-State Resistance R V =2.5V, I =2.8A - 50 68 m DS(on) GS D V =1.8V, I =1.5A - 66 95 GS D Zero Gate Voltage Drain Current I V =20V, V =0V - - 1 uA DSS DS GS Gate-Source Leakage Current I V =+12V, V =0V - - +100 nA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 4.6 - g V =10V, I =4.1A, DS D Gate-Source Charge Q - 0.8 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 1 - gd Input Capacitance Ciss - 350 - V =10V, V =0V, DS GS Output Capacitance Coss - 40 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 29 - Turn-On Delay Time td - 4 - (on) V =10V, I =4.1A, DD D Turn-On Rise Time tr - 47 - V =4.5V, ns GS Turn-Off Delay Time td - 18 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 10 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 1.5 A S Diode Forward Current Diode Forward Voltage V I =1.0A, V =0V - 0.75 1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2%. 2. Essentially independent of operating temperature typical characteristics. 3. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is JA defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. June 30,2017-REV.01 Page 2