Product Information

PTW36N60

PTW36N60 electronic component of PIP

Datasheet
TO-3P-3 MOSFETs ROHS

Manufacturer: PIP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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The PTW36N60 is a three-terminal, vertical power MOSFET with a TO-3P-3 package manufactured by PIP. It is compliant with the EU RoHS Directive. The MOSFET has an insulated, thermally-conductive plastic case which makes it suitable for insulation-offset mounting. The device has built-in avalanche protection and has an operating temperature range of -40°C to 150°C. It supports a maximum drain-source voltage of 600V at a drain-source current of 20A and features a RDS (on) of 0.36O. This part is designed for a variety of switching and amplifier applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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