Product Information

PESDR0511P1

PESDR0511P1 electronic component of PN SILICON

TVS DFN1006 RoHS

Manufacturer: PN SILICON
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0343 ea
Line Total: USD 0.69

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 20
Multiples : 20

Stock Image

PESDR0511P1
PN SILICON

20 : USD 0.0343
200 : USD 0.0269
600 : USD 0.0229
2000 : USD 0.0205
10000 : USD 0.0183
20000 : USD 0.0171

     
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Product Category
Category
Rohs
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The PESDR0511P1 is a dual-channel protection diode designed and manufactured by PN SILICON. It is a TVSDFN1006 RoHS compliant part and has a diode voltage drop of 5.1V. It is used to protect a circuit or device from voltage transients that could cause damage due to electromagnetic compatibility (EMC). It features an EPOC insulation level of 4000V, an operating temperature range of -40°C to +85°C, a Surge Capability of 250A for 10/1000 µs Pulse Waveforms (IEC61000-4-5 WF1, and an ESD immunity level of 15KVP for contact and 8KVP for air discharge. It is also RoHS compliant with halogen-free option available.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

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