CM300HA-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD H-Series Module 300 Amperes/600 Volts A W - M6 THD. S P (2 TYP.) D G C F T Description: Q V - DIA. X - M4 THD. M H N Powerex IGBTMOD Modules (4 TYP.) (2 TYP.) are designed for use in switching B applications. Each module consists U of one IGBT Transistor in a single configuration with a reverse- K K connected super-fast recovery R free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, E offering simplified system assembly J L and thermal management. Features: Low Drive Power T Low V CE(sat) Discrete Super-Fast Recovery (70ns) Free-Wheel Diode E C High Frequency Operation (20-25kHz) E Isolated Baseplate for Easy G Heat Sinking Applications: AC Motor Control Outline Drawing and Circuit Diagram Motion/Servo Control Dimensions Inches Millimeters Dimensions Inches Millimeters UPS A 4.21 107.0 M 0.83 21.0 Welding Power Supplies Laser Power Supplies B 3.6610.01 93.00.25 N 0.69 17.5 C 2.44 62.0 P 0.63 16.0 Ordering Information: Example: Select the complete part D 1.890.01 48.00.25 Q 0.51 13.0 module number you desire from E 1.42 Max. 36.0 Max. R 0.43 11.0 the table below -i.e. CM300HA-12H F 1.34 34.0 S 0.35 9.0 is a 600V (V ), 300 Ampere CES G 1.18 30.0 T 0.28 7.0 Single IGBTMOD Power Module. H 1.14 29.0 U 0.12 3.0 Type Current Rating V CES Amperes Volts (x 50) J 0.98 Max. 25.0 Max. V 0.26 Dia. Dia. 6.5 CM 300 12 K 0.94 24.0 W M6 Metric M6 L 0.93 23.5 X M4 Metric M4 169Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300HA-12H Single IGBTMOD H-Series Module 300 Amperes/600 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specified j Ratings Symbol CM300HA-12H Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E SHORT) V 600 Volts CES Gate-Emitter Voltage V 20 Volts GES Collector Current I 300 Amperes C Peak Collector Current I 600* Amperes CM Diode Forward Current I 300 Amperes F Diode Forward Surge Current I 600* Amperes FM Power Dissipation P 1100 Watts d Max. Mounting Torque M6 Terminal Screws 26 in-lb Max. Mounting Torque M6 Mounting Screws 26 in-lb Module Weight (Typical) 400 Grams V Isolation V 2500 Volts RMS * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 30mA, V = 10V 4.5 6.0 7.5 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 300A, V = 15V 2.1 2.8** Volts CE(sat) C GE I = 300A, V = 15V, T = 150C 2.15 Volts C GE j Total Gate Charge Q V = 300V, I = 300A, V = 15V 900 nC G CC C GS Diode Forward Voltage V I = 300A, V = 0V 2.8 Volts FM E GS ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 30 nF ies Output Capacitance C V = 0V, V = 10V, f = 1MHz 10.5 nF oes GE CE Reverse Transfer Capacitance C 6 nF res Resistive Turn-on Delay Time t 350 ns d(on) Load Rise Time t V = 300V, I = 300A, 600 ns r CC C Switching Turn-off Delay Time t V = V = 15V, R = 2.1 350 ns d(off) GE1 GE2 G Times Fall Time t 300 ns f Diode Reverse Recovery Time t I = 300A, di /dt = 600A/ s 110 ns rr E E Diode Reverse Recovery Charge Q I = 300A, di /dt = 600A/ s 0.81 C rr E E Thermal and Mechanical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R Per IGBT 0.11 C/W th(j-c) Thermal Resistance, Junction to Case R Per FWDi 0.24 C/W th(j-c) Contact Thermal Resistance R Per Module, Thermal Grease Applied 0.040 C/W th(c-f) 170