Product Information

QH03BZ600

QH03BZ600 electronic component of Power Integrations

Datasheet
Diodes - General Purpose, Power, Switching Super-Low Qrr. 600V, 3A, Rectifier
Manufacturer: Power Integrations
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4800: USD 0.7285 ea
Line Total: USD 3496.8

0 - Global Stock
MOQ: 4800  Multiples: 4800
Pack Size: 4800

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

QH03BZ600
Power Integrations

1 : USD 1.676
10 : USD 1.4618
100 : USD 1.2506
500 : USD 0.9912
1000 : USD 0.8937
5000 : USD 0.8694

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 4800
Multiples : 4800

Stock Image

QH03BZ600
Power Integrations

4800 : USD 0.7061

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Technology
Brand
Cd - Diode Capacitance
Ifsm - Forward Surge Current
Factory Pack Quantity :
Trr - Reverse Recovery Time
Vrrm - Repetitive Reverse Voltage
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Tradename
LoadingGif

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Additional Infomation About Product

QH03TZ600, QH03BZ600 Qspeed Family 600 V, 3 A H-Series PFC Diode Product Summary General Description I 3 A F(AVG) This device has the lowest Q of any 600 V RR V 600 V RRM silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate Q (Typ at 125 C) 14.8 nC RR snubbers. I (Typ at 125 C) 1.35 A RRM Softness t /t (Typ at 125 C) 1.1 B A Applications Power Factor Correction (PFC) boost diode Motor drive circuits Pin Assignment DC-AC Inverters NC KKKNC Features C C NC Low Q , low I , low t RR RRM RR KKK High dI /dt capable (1000 A / s) F AA Soft recovery TO-220AC TO-263AB Benefits QH03TZ600 QH03BZ600 Increases efficiency Eliminates need for snubber circuits AA KK Reduces EMI filter component size & count Enables extremely fast switching RoHS Compliant Package uses Lead-free plating and Green mold compound. Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V Peak repetitive reverse voltage T = 25 C 600 V RRM J I Average forward current T = 150 C, T = 120 C 3 A F(AVG) J C I Non-repetitive peak surge current 60 Hz, cycle, T = 25 C 35 A FSM C I Non-repetitive peak surge current cycle of t = 28 s Sinusoid, T = 25 C 350 A FSM C T Operating junction temperature range -55 to 150 C J T Storage temperature -55 to 150 C STG Lead soldering temperature Leads at 1.6 mm from case, 10 sec 300 C V Isolation voltage (leads-to-tab) AC, TO-220 2500 V ISOL V Isolation voltage (leads-to-tab) AC, TO-263 1500 V ISOL P Power dissipation T = 25 C 30.4 W D C www.power.com November 2015 QH03TZ600, QH03BZ600 Thermal Resistance Symbol Resistance from: Conditions Rating Units R Junction to ambient TO-220 (only) 62 C/W JA R Junction to case 4.1 C/W JC Electrical Specifications at T = 25 C (unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Units DC Characteristics V = 600 V, T = 25 C - - 250 A R J I Reverse current R V = 600 V, T = 125 C - 0.22 - mA R J I = 3 A, T = 25 C - 2.52 3.0 V F J V Forward voltage F I = 3 A, T = 150 C - 2.1 - V F J C Junction capacitance V = 10 V, 1 MHz - 11 - pF J R Dynamic Characteristics dI/dt = 200 A/ s T = 25 C - 9.8 - ns J t Reverse recovery time RR V = 400 V, I = 3 A R F T = 125 C - 16.1 - ns J dI/dt = 200 A/ s T = 25 C - 5.8 10 nC Reverse recovery J Q RR V = 400 V, I = 3 A charge R F T = 125 C - 14.8 - nC J dI/dt = 200 A/ s T = 25 C - 0.93 1.4 A Maximum reverse J I RRM V = 400 V, I = 3 A recovery current R F T = 125 C - 1.35 - A J T = 25 C - 0.92 - t J dI/dt = 200 A/ s B Softness factor = S V = 400 V, I = 3 A R F T = 125 C - 1.1 - tA J Note to component engineers: H-Series diodes employ Schottky technologies in their design and construction. Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups. (For additional details, see Application Note AN-300.) I t F RR dI /dt F t t a b 0 0.1xI RRM I RRM Figure 2. Reverse Recovery Test Circuit. Figure 1. Reverse Recovery Definitions. 2 Rev 1.3 11/15

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Power Integrations may also be referenced as

Power Integrations
POWER INTEGRATIONS INC.

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