Three Phase PSD 25T I = 25 A dAVM Rectifier Bridges PSD 25TN V = 1200 V to 1800 V RRM Preliminary Data Sheet Type Number V V RSM RRM Gold-plated Nickel-plated V V terminals terminals 1200 1200 PSD 25T/12 PSD 25TN/12 ~ 1400 1400 PSD 25T/14 PSD 25TN/14 ~ ~ 1600 1600 PSD 25T/16 PSD 25TN/16 1800 1800 PSD 25T/18 PSD 25TN/18 Symbol Test Conditions Maximum Ratings Features I T = 62C per module 25 A dAVM c gold- or nickel-plated FASTON I T = 45C, V = 0 V t = 10 ms 50 Hz, sine 380 A FSM vj R terminals T = T , V = 0 V t = 10 ms 50 Hz, sine 360 A Isolation voltage 3000 V~ vj vjm R Mesa glass-passivated chips 2 2 i dt T = 45C, V = 0 V t = 10 ms 50 Hz, sine 725 A s vj R Blocking voltage up to 1800 V T -40 ... +150 C vj Low forward voltage drop UL registered E 148688 T 150 C vjm T -40 ... +150 C stg Applications Supplies for DC power equipment Visol 50/60 Hz, RMS t = 1 min 2500 V~ Input rectifiers for PWM inverters Iisol 1mA t = 1 s 3000 V~ Battery DC power supplies Field supply of DC motors Md Mounting torque (M5) 210% Nm (10-32 UNF) 1810% lb in Advantages Easy to mount with one screw Weight typ. 20 g Space and weight savings Improved temperature and power cycling capability Symbol Test Conditions Characteristic Value Package style and outline I V = V T = 25C 0.3 mA R R RRM vj V = V T = T 5.0 mA R RRM vj vjm V I = 150 A T = 25C 2.2 V F F vj VTO For power-loss calculations only 0.85 V rT Tvj = Tvjm 12 m Rth(j-c) per diode DC current 9.3 K/W per module 1.55 K/W R per diode DC current 10.2 K/W th(j-s) per module 1.7 K/W d Creeping distance on surface 12.7 mm S d Creeping distance on air 9.4 mm A 2 a Maximum allowable acceleration 50 m/s Data according to IEC 60747 refers to a single diode unless otherwise stated Dimensions in mm (1mm = 0.0394) www.powersem.com Page 1/2 info powersem.de 2013 POWERSEM reserves the right to change limits, test conditions and dimensions v1.2PSD 25T PSD 25TN 3 I 10 F(OV) ------ I 30 FSM I (A) FSM 2 A As TVJ=45C TVJ=150C 25 T=150C 1.6 380 340 TVJ=45C 1.4 20 TVJ=150C 1.2 15 1 10 0 V RRM 0.8 5 1/2 V RRM I T=25C F 0.6 1 V RRM 2 0 10 V V F 1 1.5 1 2 4 6 10 0.4 t ms 0 1 2 3 10 10 t ms 10 10 2 Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 i dt versus time voltage drop per diode per diode IFSM: Crest value. (1-10ms) per diode (or thyristor) t: duration 55 60 TC 60 W 30 65 0.530.12 = RTHCA K/W DC 70 A sin.180 50 0.95 75 rec.120 80 rec.60 85 40 rec.30 90 20 1.78 95 100 30 105 110 3.45 115 10 20 120 DC 125 sin.180 130 8.45 rec.120 10 135 I dAV rec.60 140 145 PVTOT rec.30 0 C 50 100 150 200 150 0 0 50 100 150 20 T (C) C IFAVM A Tamb K Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current temperature at case temperature 12 Z K/W thJK Z 10 thJC 8 6 4 2 Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode (or thyristor), calculated www.powersem.com Page 2/2 info powersem.de 2013 POWERSEM reserves the right to change limits, test conditions and dimensions v1.2