EK46140-01 pSemi

Product Specification PE42920 UltraCMOS Passive DDSPDT High-Isolation RF Switch 10 kHz6 GHz Product Description The PE42920 is a dual differential single pole double Features throw (DDSPDT) RF switch developed on Peregrines Dual differential single pole double UltraCMOS process technology. It is a broadband and throw switch low loss device enabling the switching of two Broadband: 10 kHz to 6 GHz independent differential signals. This device consumes Low frequency insertion loss: 0.7 dB less power than active differential switches and offers 2 typical kV HBM ESD protection. It has high isolation between same channel inputs as well as opposite active channels. High isolation between same channels It has been designed for low phase mismatch between at 6 GHz: 26 dB typical matched paths. High isolation between opposite active channels at 6 GHz: 30 dB typical The PE42920 is manufactured on Peregrines Low phase mismatch between matched UltraCMOS process, a patented variation of silicon-on- paths at 6 GHz: 15 degrees typical insulator (SOI) technology on a sapphire substrate, High ESD performance: 2 kV HBM offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 2. Package Type 16-lead 3 3 mm QFN Figure 1. Functional Diagram DOC-52427 Note: Differential pairs B1/B2 and Y1/Y2 must be switched simultaneously to pairs C1/C2 and Z1/Z2. See Table 5, Truth Table. Document No. DOC-12914-3 www.psemi.com 2012-2015 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 13 OBSOLETE PE42920 Product Specification Table 1. Typical Specifications V = 3.3V, Temp = +25 C (Z = Z = 100 differential) DD S L Min/Max Specifications V = 3.3V 10%, 40 C Temp +85 C, (Z = Z = 100 differential) DD S L AC coupled external DC blocking caps Electrical Parameter Condition/Notes Min Typ Max Unit Frequency range 10 kHz 6 GHz As shown Operating frequency Differential 3 dB bandwidth 5.6 6 GHz Insertion loss at 10 kHz V = 1.1V 0.7 1.25 dB CM Insertion loss at 1 GHz V = 1.1V 1.0 1.4 dB CM Isolation between same A to C when B is ON. A to B when C is ON 24 26 dB channel inputs at 6 GHz X to Z when Y ON. X to Y when Z is ON Isolation between opposite Channels A X. V = 1.1V 25 30 dB CM (active) channels at 6 GHz Input 1dB compression* (P ) VCM = 1.1V, differential 10 13 dBm 1dB 501250 MHz 12.5 14 dB Differential 12502500 MHz 8 9 dB 25004000 MHz 5.5 8 dB Return loss common ports A and X 501250 MHz 14.5 17.5 dB Single ended 12502500 MHz 12 14 dB 25004000 MHz 10.5 13 501250 MHz 12.5 15.5 dB Differential 12502500 MHz 8.5 9.5 dB 25004000 MHz 8 9.5 dB Return loss active ports B, C, Y, Z 501250 MHz 16 18.5 dB Single ended 12502500 MHz 13 16 dB 25004000 MHz 10.5 14.5 dB Switching time 50% control to 10/90% RF 270 450 ns V = 1 matched paths V = 0 matched paths SEL SEL Phase mismatch on matched (A1 B1 & A2 B2) (A1 C1 & A2 C2) V = 1.1V 15 30 degrees CM paths at 6 GHz (X1 Y1 & X2 Y2) (X1 Z1 & X2 Z2) Phase mismatch on Unmatched: average of A1,A2 delay to average of X1,X2 V = 1.1V 22 50 degrees CM un-matched paths at 6 GHz Phase delta stability Across voltage and temperature 2 degrees Common mode voltage Common port self biased V (V V /3) 1.1 V CM cm DD Common port bias Z to V 100 k CM DD Common mode impedance resistances Z to GND 50 k CM Input IP3 Single ended (see Figure 19) dBm Note: * P1dB is an indication of device linearity, max operating power is restricted to limits in Table 3. 2012-2015 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-12914-3 UltraCMOS RFIC Solutions Page 2 of 13 OBSOLETE