Product Information

PE43205B-Z

PE43205B-Z electronic component of pSemi

Datasheet
Attenuators 50 2Bit 18.0dB 6.0dB Digital Step Attenuator

Manufacturer: pSemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.6783 ea
Line Total: USD 3.68

9347 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8918 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 2.645
100 : USD 1.863
1000 : USD 1.3225
3000 : USD 1.3225
6000 : USD 1.1362
12000 : USD 1.0937
24000 : USD 1.0488

     
Manufacturer
Product Category
Impedance
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Rohs
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Brand Category
Attenuation Value
Frequency Range
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Product Specification PE43205 UltraCMOS RF Digital Attenuator 2-bit, 18 dB, 356000 MHz Product Description The PE43205 is a 50, HaRP technology-enhanced Features fast switching 2-bit RF Digital Step Attenuator (DSA) Attenuation: 6 dB / 12 dB steps to 18 dB designed for use in 3G/4G wireless infrastructure and Fast switching time of 29 ns other high performance RF applications. Low attenuation error 0.10 dB 2 GHz This DSA is a pin-compatible upgraded version of the 0.15 dB 3 GHz PE43204 with a wider frequency and power supply range, and extended operating temperature range. High linearity +61 dBm IIP3 1950 MHz Covering an 18 dB attenuation range in 6 dB and 12 dB Wide supply range of 2.3V to 5.5V steps, it maintains high RF performance and low power 1.8V control logic compatible consumption from 35 MHz through 6 GHz. PE43205 is 105C operating temperature offered in a 12-lead 3x3 mm QFN package. In addition, ESD performance no external blocking capacitors are required if 0 VDC is 2 kV HBM on all pins present on the RF ports. 100V MM on all pins 1 kV CDM on all pins The PE43205 is manufactured on pSemis UltraCMOS Parallel control process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemis HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram Figure 2. Package Type 12-lead 3x3 mm QFN Switched Attenuator Array RF Input RF Output Parallel Control 2 Control Logic Interface DOC-01281 Document No. DOC-85387-2 www.psemi.com 2017, 2019 pSemi Corp. All rights reserved. Page 1 of 11 PE43205 Product Specification Table 1. Electrical Specifications +25C, V = 2.3V to 5.5V DD Parameter Condition Min Typ Max Unit Frequency range 35 6000 MHz Attenuation range 6 dB and 12 dB steps 018 dB 35 MHz2 GHz 0.50 0.60 dB 23 GHz 0.60 0.70 dB Insertion loss 34 GHz 0.70 0.80 dB 45 GHz 0.85 1.10 dB 56 GHz 1.05 1.30 dB 0 dB18 dB attenuation settings 35 MHz2 GHz 0.45 0.10 0.40 dB >23 GHz 0.45 0.15 0.50 dB Attenuation error >34 GHz 0.15 0.45 1.05 dB >45 GHz 0.15 0.55 1.25 dB >56 GHz 0.30 0.75 1.55 dB 35 MHz2 GHz 17 dB 23 GHz 14 dB Return loss 34 GHz 11 dB 45 GHz 10 dB 56 GHz 9 dB All states 35 MHz2 GHz 9 deg 23 GHz 12 deg Relative phase 34 GHz 17 deg 45 GHz 22 deg 56 GHz 24 deg Input 0.1dB compression point * 200 MHz6 GHz 30 dBm IIP3 1950 MHz 61 dBm Switching time 50% DC CTRL to 90% or 10% RF 29 ns Note: * Input 0.1 dB compression point is a linearity figure of merit. Refer to Table 3 for operating RF input power (50 ). 2017, 2019 pSemi Corp. All rights reserved. Document No. DOC-85387-2 UltraCMOS RFIC Solutions Page 2 of 11

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Peregrine
PEREGRINE SEMICONDUCTOR

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