AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Features Product Description Functional Diagram The AH212 is a high dynamic range two-stage driver 1800 2400 MHz Vcc1 1 8 8 N/C amplifier in a low-cost surface mount package. The 24.7 dB Gain Vbias1 2 7 InGaP/GaAs HBT is able to achieve superior performance 7 Vcc2 / RF Out for various narrowband-tuned application circuits with up +30 dBm P1dB RF In 3 6 6 Vcc2 / RF Out to +46 dBm OIP3 and +30 dBm of compressed 1-dB +46 dBm Output IP3 power. The amplifier is available in an industry-standard 5 N/C Vbias2 4 5 SMT lead-free/ RoHS-compliant SOIC-8 or 4x5mm DFN +5V Single Positive Supply package. All devices are 100% RF and DC tested. AH212-S8G Internal Active Bias Lead-free/ RoHS-compliant The product is targeted for use as linear driver amplifier for 1 12 Vcc1 Vbias1 various current and next generation wireless technologies SOIC-8 & 4x5mm DFN Package N/C 2 11 N/C such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA, 3 10 Vcc2 / RF Out and WiBro, where high linearity and high power is RF In Applications required. The internal active bias allows the AH212 to N/C 4 9 Vcc2 / RF Out maintain high linearity over temperature and operate 5 8 N/C N/C Mobile Infrastructure directly off a +5 V supply. Vbias2 6 7 N/C WiBro Infrastructure AH212-EG TD-SCDMA (1) (1) Specifications Typical Performance Parameters Units Min Typ Max Parameters Units Typical Operational Bandwidth MHz 1800 2400 Frequency MHz 1960 2140 (3) Gain dB 24.6 24.7 Test Frequency MHz 2140 Input Return Loss dB 12.5 25 Gain dB 22.2 24.7 Output Return Loss dB 10 9 Input Return Loss dB 25 (3) Output P1dB dBm +30 +29.5 Output Return Loss dB 9 Output IP3 dBm +48.0 +46 Output P1dB dBm +29 +29.5 (2) IS-95A Channel Power Output IP3 dBm +43.5 +46 dBm +23.0 -45 dBc ACPR Noise Figure dB 6.0 W-CDMA Channel Power dBm +21 W-CDMA Channel Power -45 dBc ACLR dBm +21 -45 dBc ACLR Noise Figure dB 5.5 6.0 Operating Current Range , Icc mA 340 400 500 Supply Bias +5 V 400 mA Stage 1 Amp Current, Icc1 mA 85 3. The performance is shown for the AH212-S8G (SOIC-8 package) at 25C. The AH212-EG in a 4x5 Stage 2 Amp Current, Icc2 mA 315 mm DFN package offers approximately 0.5dB more gain and 0.5 dB higher P1dB. Device Voltage, Vcc V 5 1. Test conditions unless otherwise noted: 25 C, +5V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Ordering Information Absolute Maximum Rating Part No. Description Parameter Rating 1 Watt, High Gain InGaP HBT Amplifier Storage Temperature -65 to +150 C AH212-S8G (lead-free/ RoHS-compliant SOIC-8 package) RF Input Power (continuous) +26 dBm 1 Watt, High Gain InGaP HBT Amplifier AH212-EG Device Voltage +7 V (lead-free/ RoHS-compliant 12-pin 4x5mm DFN package) Device Current 900 mA AH212-S8PCB1960 1960 MHz Evaluation Board Device Power 5 W AH212-S8PCB2140 2140 MHz Evaluation Board Thermal Resistance, Rth 33 C/W AH212-EPCB1960 1960 MHz Evaluation Board Junction Temperature +200 C AH212-EPCB2140 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Standard tape / reel size = 500 pieces for SOIC-8 package on a 7 reel Standard tape / reel size = 1000 pieces for DFN package on a 7 reel. Specifications and information are subject to change without notice. TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 1 of 12 July 2010 AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier Typical Device Data (SOIC-8) S-Parameters (V = +5 V, I = 400 mA, T = 25 C, calibrated to device leads) CC CC S11 S22 Gain Swp Max Swp Max 35 3GHz 3GHz DB( S(2,1) ) AH212 30 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 S(1,1) Frequency (GHz) S(2,2) Swp Min Swp Min AH212 AH212 0.01GHz 0.01GHz Notes: The gain for the unmatched device in 50-ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 3000 MHz, with markers placed at 0.5 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-S8G (V = +5 V, I = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) CC CC Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 -9.19 -130.35 17.61 65.80 -64.44 122.93 -2.71 -145.39 100 -4.58 -125.96 21.86 69.36 -58.42 -135.96 -2.92 -160.72 200 -0.92 -169.81 27.39 14.98 -55.39 49.47 -3.04 -166.12 400 -2.81 160.59 26.96 -55.64 -50.75 78.75 -1.13 -169.23 600 -4.10 134.99 26.35 -69.83 -49.90 59.30 -0.86 -179.36 800 -10.08 97.76 30.19 -108.08 -46.20 44.46 -0.93 172.84 1000 -14.20 -174.16 31.30 -167.40 -49.63 25.99 -1.05 164.98 1200 -7.51 146.36 29.49 141.86 -44.88 48.15 -1.97 159.52 1400 -6.58 101.88 27.14 99.61 -45.19 29.86 -2.76 156.95 1600 -6.67 65.24 25.02 63.05 -46.75 33.97 -2.82 154.08 1800 -7.87 37.31 23.35 28.87 -47.96 24.08 -2.53 150.05 2000 -11.42 19.84 22.01 -5.81 -44.88 70.88 -2.08 143.86 2200 -18.51 69.85 20.56 -44.21 -40.54 52.01 -1.45 134.91 2400 -8.70 105.38 18.40 -84.80 -38.49 31.21 -1.02 123.57 2600 -4.43 93.47 15.61 -122.39 -38.94 23.84 -0.89 113.66 2800 -2.78 84.89 12.91 -156.41 -39.25 -2.01 -1.16 106.71 3000 -2.44 81.11 10.51 167.98 -38.27 0.70 -1.34 101.38 Device S-parameters are available for download from the website at: