X-On Electronics has gained recognition as a prominent supplier of FMS2014-001-EB unclassified across the USA, India, Europe, Australia, and various other global locations. FMS2014-001-EB unclassified are a product manufactured by Qorvo. We provide cost-effective solutions for unclassified, ensuring timely deliveries around the world.

FMS2014-001-EB Qorvo

FMS2014-001-EB electronic component of Qorvo
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Part No.FMS2014-001-EB
Manufacturer: Qorvo
Category:Unclassified
Description: EVAL BOARD, FMS2014-001, SPDT SWITCH
Datasheet: FMS2014-001-EB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 436.5475 ea
Line Total: USD 436.55

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 11 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 475.2637

     
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FMS2014-001 High Power GaAs SPDT Switch FMS2014-001 HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Excellent Low Control Voltage Arsenide antenna switch designed for use in mobile handset applications. The die Performance is fabricated using the RFMD FL05 0.5 m switch process technology, which offers Excellent Harmonic Perfor- excellent performance optimised for switch applications. The FMS2014-001 is mance Under designed for use in dual-, tri-, and quad-band GSM handset antenna switch mod- GSM/DCS/PCS/EDGE Power ules and RF front end modules. It can also find use in other applications where high Levels power and linear RF switching is necessary. Very High Tx-Rx Isolation: >28dB typ. at 1.8GHz Optimum Technology Very Low Insertion Loss: Matching Applied 0.5dB at 1.8GHz ANT GaAs HBT GaAs MESFET Very Low Control Current InGaP HBT V1 V2 SiGe BiCMOS Applications Si BiCMOS Mobile Handset Applications SiGe HBT RF1 RF2 Dual-, Tri-, and Quad-band GaAs pHEMT 9 GSM Handset Antenna Si CMOS Switch Modules Si BJT GaN HEMT RF Front End Modules InP HBT RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. T =25C, V =0V/2.5V, Z =Z =50 AMBIENT CTRL IN OUT Electrical Specifications External DC-blocking capacitors are required on all RF ports (typ. 700 F) Insertion Loss 0.45 0.5 dB 0.5 GHz to 1.0GHz 0.5 0.55 dB 1.0GHz to 2.0GHz Return Loss 16 20 dB 0.5GHz to 2.5GHz Isolation -30 -32 dB 0.5GHz to 1.0GHz -26 -30 dB 1.0GHz to 2.0GHz 2nd Harmonic Level -60 -70 dBc 1GHz, P =+35dBm, 100% duty cycle IN -65 -75 dBc 2GHz, P =+33dBm, 100% duty cycle IN 3rd Harmonic Level -60 -70 dBc 1GHz, P =+35dBm, 100% duty cycle IN -65 -75 dBc 2GHz, P =+33dBm, 100% duty cycle IN Switching Speed: T , T <0.3 1.0 s 10% to 90% RF and 90% to 10% RF RISE FALL Switching Speed: T , T <0.3 1.0 s 50% control to 90% RF and 50% control to 10% ON OFF RF Control Current 5 10 A +35dBm RF input at 1GHz General Test Conditions Bias Voltages (Low) 0 0.2 V Bias Voltages (High) 2.5 5 V Port Impedances 50 Off Arm Termination 50 RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical Rev A2 DS090608 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 6FMS2014-001 1 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Maximum Input Power (P ) +38 dBm IN cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Control Voltage (V)+5 V mance or functional operation of the device under Absolute Maximum Rating condi- CTRL tions is not implied. Operating Temperature (T )-40 to 100 C OPER RoHS status based on EUDirective2002/95/EC (at time of this document revision). Storage Temperature (T ) -55 to 150 C STOR The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Truth Table Switch State VC1 VC2 ANT - RF1 ANT - RF2 A High Low Insertion loss Isolation B Low High Isolation Insertion Loss Typical Measured Performance on Evaluation Board (De-embedded) Measurement Conditions: V =2.5V (high) and 0V (low), T =25 C unless otherwise stated. CTRL AMBIENT FMS2014QFN INSERTION LOSS FMS 2014QFN ISOLATION 0 -20 -0.1 -22.5 -0.2 -0.3 -25 -0.4 -0.5 -27.5 -0.6 -30 -0.7 -0.8 -32.5 -0.9 -1 -35 0.5 1 1.5 2 2.5 3 0.5 1 1.5 2 2.5 3 Frequency (GHz) Frequency (GHz) FMS2014QFN RETURN LOSS 0 -5 -10 -15 -20 -25 -30 -35 -40 0.5 1 1.5 2 2.5 3 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. Rev A2 DS090608 dB dB dB

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