X-On Electronics has gained recognition as a prominent supplier of QPA2735TR7X rf amplifier across the USA, India, Europe, Australia, and various other global locations. QPA2735TR7X rf amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

QPA2735TR7X

QPA2735TR7X electronic component of Qorvo
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Part No.QPA2735TR7X
Manufacturer: Qorvo
Category:RF Amplifier
Description: RF Amplifier QPA2735 .75-18 GHz LNA OM Pkg
Datasheet: QPA2735TR7X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 47.5907
25 : USD 42.0559
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Brand
Number Of Channels
Development Kit
Input Return Loss
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
Gbp - Gain Bandwidth Product
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We proudly offer the QPA2735TR7X RF Amplifier at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the QPA2735TR7X RF Amplifier.

QPA2735 13 20GHz GaAs Low Noise Amplifier General Description Qorvos QPA2735 is a packaged, high-performance, low noise amplifier fabricated on Qorvos production 90nm pHEMT (QPHT09) process. Covering 13 20 GHz, the QPA2735 provides 25.5 dB small signal gain and P1dB of 18 dBm, while supporting a noise figure of 1.3 dB and IM3 levels of 60 dBc (at Pout=0 dBm/tone). Packaged in a small 4 mm x 4 mm plastic overmold QFN, the QPA2735 is matched to 50 ohms with integrated DC blocking caps on both I/O ports for easy handling and simple system integration. The QPA2735 high performance and ease of handling makes it ideal for satellite and point to point communication systems. Functional Block Diagram Product Features Frequency Range: 13 20GHz Noise Figure: 1.3 dB Small Signal Gain: 25.5 dB Power at 1 dB Compression: 18 dBm Saturation Power: 23 dBm IMD3: 60 dBc ( Pout = 0 dBm/tone) Bias: VD = 3.5 V, IDQ = 105 mA, VG = 0.46 V Plastic Over-mold Package Package Dimensions: 4.0 x 4.0 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Ordering Information Part No. Description Applications QPA2735TR7X QPA2735 Tape and Reel 7 , Qty 50 Satellite Communications QPA2735TR7 QPA2735 Tape and Reel 7 , Qty 750 Point to Point Communications QPA2735EVB1 QPA2735 LNA Evaluation Board, Qty 1 Data Sheet Rev. D, May 2020 Subject to change without notice - 1 of 15 - www.qorvo.com QPA2735 13 20GHz GaAs Low Noise Amplifier Absolute Maximum Ratings Parameter Value Units Drain Voltage (VD) 4.5 V Drain Current (ID1/ID2/ID3) 96/90/192 mA Gate Voltage Range -1.3 to 0 V Gate Current (IG1/IG2/IG3 at 125 C) 5.0/5.0/6.6 mA RF Input Power (50 , 85 C) 20 dBm Channel Temperature, T 175 C CH Mounting Temperature (30 seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may reduce device reliability. Recommended Operating Conditions Parameter Value Units Drain Voltage 3.5 V Drain Current (quiescent, IDQ) 105 mA Gate Voltage (typical) -0.46 V Operating Temperature Range 40 to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions, unless otherwise noted: VD = 3.5 V, IDQ = 105 mA, 25 C. Data de-embedded to device reference planes. Parameter Min Typical Max Units Frequency 13 20 GHz Small Signal Gain 25.5 dB Noise Figure 1.3 dB Power 1- dB Compression Point 18 dBm Input Return Loss 12 dB Output Return Loss 15 dB RD 3 Order Intermodulation level (Pout= 0 dBm / tone) 60 dBc Output TOI (Pout= 0 dBm / tone) 30 dBm Gain Temperature Coefficient 0.013 dB/C Data Sheet Rev. D, May 2020 Subject to change without notice - 2 of 15 - www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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RFMD
RFMD (Qorvo)
TriQuint
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TRIQUINT SEMI
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