Product Information

QPA4586ATR13

QPA4586ATR13 electronic component of Qorvo

Datasheet
RF Amplifier DC-4GHz Gain 19.9dB P1dB 16.3dBm NF2.7dB

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.5503 ea
Line Total: USD 6.55

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 6.5503
25 : USD 3.459
100 : USD 2.8065
250 : USD 2.2887
500 : USD 1.8952
1000 : USD 1.5535
3000 : USD 1.4809
6000 : USD 1.4705

     
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RoHS - XON
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QPA4586A DC4000MHz Cascadable SiGe HBT Amplifier General Description The QPA4586A is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration provides high F and T excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for 4 Lead SOT-86 Package operation. Product Features High Gain: 19.9dB at 1950MHz Cascadable 50 Operates from Single Supply Low Thermal Resistance Package Applications Instrumentation Functional Block Diagram Repeaters Boosters PA Driver Amplifier Cellular, PCS, GSM, UMTS 4 IF Amplifier Wireless Data, Satellite 1 3 2 Ordering Information Part No. Description Top View QPA4586ATR13 3000 pieces on a 13 reel (standard) QPA4586APCK401 850MHz, +5V EVB with 5 Piece Sample Bag Datasheet Rev. E, March 25, 2021 Subject to change without notice 1 of 9 www.qorvo.com QPA4586A DC 4000MHz Cascadable SiGe HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temp 55 to +150C Operating Temperature 55 +105 C Device Voltage (V ) +5 V Junction Temperature (T ) +125 C D J Device Current (ID) 90 mA Device Operating Voltage +3.2 +3.5 +3.8 V RF Input Power +18 dBm Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating Exceeding any one or a combination of the Absolute Maximum Rating conditions. conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units 850 MHz 23.3 dB Small Signal Gain 1950 MHz 19.9 dB 2400 MHz 18.6 dB 850 MHz +15.7 dBm Output Power at 1dB Compression 1950 MHz +16.3 dBm 850 MHz +29.7 dBm Output Third Intercept Point 1950 MHz +30.1 dBm Input Return Loss 1950 MHz 16.3 dB Output Return Loss 1950 MHz 24.2 dB Noise Figure 1950 MHz 2.7 dB Device Operating Current 45 mA Thermal Resistance, jc 86 C/W Notes: 1. Test conditions unless otherwise noted: V = +8V, I = 45mA Typ., OIP3 Tone Spacing=1MHz, P per tone = 0dBm, R1 = 100, 50 system, S D OUT Temp=+25C Datasheet Rev. E, March 25, 2021 Subject to change without notice 2 of 9 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
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