QPD1014 15W, 50V, 30 1200 MHz, GaN RF Input-Matched Transistor General Description The QPD1014 is a 15W (P3dB), 50-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1200MHz on a 50V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. It is ideally suited for basestation, radar and communications applications and can support both CW and pulsed mode of operations. 8 Pin DFN (6 x5x0.85mm) The device is housed in a 6 x 5 mm surface mount DFN Product Features package. Frequency: 30 to 1200 MHz 1 Output Power (P ): 12.5 W 3dB 1 Linear Gain: 18.4 dB 1 Typical PAE3dB: 69.5% Operating Voltage: 50 V Low thermal resistance package Functional Block Diagram CW and Pulse capable 6 x 5 mm package Note 1: 1 GHz (Loadpull) Applications Basestation Active Antenna Military radar Civilian radar Land mobile and military radio communications Jammers Ordering info Part No. ECCN Description QPD1014 EAR99 301200MHz RF Transistor QPD1014S2 EAR99 30 1200MHz RF Transistor Sample QPD1014EVB01 EAR99 30 1000MHz EVB Rev. A - 1 of 21 - Disclaimer: Subject to change without notice 2016 Qorvo www.qorvo.com QPD1014 15W, 50V, 30 1200 MHz, GaN RF Input-Matched Transistor 1 Absolute Maximum Ratings Parameter Rating Units Breakdown Voltage,BVDG +145 V Gate Voltage Range, V -8 to +2 V G Drain Current, I 1 A D Gate Current Range, IG See page 4. mA Power Dissipation, CW, P 15.8 W DISS RF Input Power, CW, 50, T = 25C +31 dBm Channel Temperature, TCH 275 C Mounting Temperature (30Seconds) 320 C Storage Temperature 40 to +150 C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. 1 Recommended Operating Conditions Parameter Min Typ Max Units Operating Temp. Range 40 +25 +85 C Drain Voltage Range, VD +12 +50 +55 V Drain Bias Current, I 25 mA DQ Drain Current, ID 500 mA 2 Gate Voltage, V 2.8 V G Channel Temperature (T ) 250 C CH 3 Power Dissipation, CW (PD) 14.4 W Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. To be adjusted to desired I DQ. 3. Back plane of package at 85C. Rev. A - 2 of 21 - Disclaimer: Subject to change without notice 2016 Qorvo www.qorvo.com