Product Information

RF6509SR

RF6509SR electronic component of Qorvo

Datasheet
RF Front End 868/900MHz FEM for AMR & Smart Grid

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 10.2728 ea
Line Total: USD 1027.28

0 - Global Stock
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 100
Multiples : 100

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RF6509SR
Qorvo

100 : USD 10.5889

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Operating Frequency
Operating Supply Voltage
Maximum Operating Temperature
Maximum Data Rate
Mounting Style
Package / Case
NF - Noise Figure
Operating Supply Current
Packaging
Technology
Brand
Gain
Minimum Operating Temperature
Product Type
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Subcategory
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RF6509 2.7V TO 3.6V MODULE FOR INTEGRATION WITH 900MHz SMART ENERGY AMI Package Style: LGA, 32 pin, 8mm x 8mm x 1.2mm 1 32 31 30 29 28 27 26 Input Output RX o ut/TX in RX Filter 2 25 3 24 Features V2S2 V1S2 4 23 V1S1 Tx Output Power: 29.5dBm 10 Tx Gain: 31dBm 5 22 V2S1 Rx Gain: 18dB ANT 6 21 PA in 1 Rx Noise Figure: 2.5dB 7 20 PAin2 Integrated LNA with Bypass V3S2 8 19 Output Input Mode 9 18 Applications 10 11 12 13 14 15 16 17 868MHz/900MHz ISM Band Application Single Chip RF Front End Functional Block Diagram Module Product Description Portable Battery Powered Equipment The RF6509 integrates a complete solution in a single Front-End Module (FEM) for Wireless Automatic Metering AMR and Smart Grid solutions. The RF6509 integrates a 915MHz PA, some trans- Applications mit (Tx) filtering, input and output switches, a Tx or receive (Rx) attenuation path, and an LNA with bypass mode. The RF6509 has a single-ended input and output for optimized ease of use and implementation. The pin-out of the FEM enables users to implement additional filtering external to the module, if needed. The device is provided in a LGA, 32 pin, 8mm x 8mm x 1.2mm package. Ordering Information RF6509 2.7V to 3.6V Module for Integration with 900MHz Smart Energy AMI RF6509PCK-410 Fully Assembled Evaluation Board and 5 loose pieces. Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS121128 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 12 PAVcc RX Filter LNA Vref LNA Vsel PAbias LNA Vcc PAVreg V3S1 PAVccRF6509 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Overall Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- DC Supply Voltage +5.0 V tions is not implied. Operating Ambient Temperature -40 to +85 C The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Storage Temperature -40 to +150 C infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Low Noise Amplifier cation circuitry and specifications at any time without prior notice. DC Supply Current 32 mA RoHS (Restriction of Hazardous Substances): Compliant per EU Directive Input RF Power 5 dBm 2002/95/EC. Power Amplifier DC Supply Current 1200 mA Input RF Power 10 dBm Transmit/Receive Switch Input RF Power 33 dBm Specification Parameter Unit Condition Min. Typ. Max. T = 25C, PAV and PAV = 3.2V, PA = CC1 CC1 BIAS Overall 3.2V PAV = 2.85V, unless otherwise noted REG Usable Frequency Range 868 902 to 928 MHz Input Impedance 50 Input VSWR 2:1 Output Load VSWR 6:1 PA Section CW Output Power 29 29.5 dBm PA , P = -3 < 0 < 3dBm BIAS IN Small Signal Gain 29 31 dB PA , P = -20dBm BIAS IN Second Harmonic -42.5 dBc PA , P = 29.5dBm at ANT port BIAS OUT Third Harmonic -72.5 dBc PA , P = 29.5dBm at ANT port BIAS OUT Fourth Harmonic -42.5 dBc PA , P = 29.5dBm at ANT port BIAS OUT Input VSWR 2:1 Output VSWR 6:1 Oscillations <-60dBc Power Supply Voltage 2.7 3.2 3.6 V Power Supply Current 730 850 mA PA BIAS 70 100 AV = 3.2V, PA = 3.2V, PAV = 0V, CCPA BIAS REG Power Supply Current for PA V 18.0 20.0 mA BIAS Power Supply Current for PA V 70.0 100.0 A REG LNA Section HIGH GAIN MODE LNAV = 3.0V, LNAV = 3.0V, LNAV = CC REF SEL 0.0V, PA = 0.0V, PAV = 0.0V BIAS REG Gain 17.5 18 18.5 dB 902MHz to 928MHz 15.5 16.5 17.5 dB 868MHz Noise Figure 2.4 3.4 dB Input IP3 7.5 9.5 12 dBm Output VSWR 1.6:1 2:1 2.4:1 Supply Current 12 mA 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 12 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. DS121128

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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RFMD (Qorvo)
TriQuint
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