RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLI- FIER RFPA2226 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features P =33.5dBm at 5V, 2.4GHz 1dB RFPA2226 802.11g 54Mb/s Class AB Performance P =26dBm at 2.5% EVM, OUT V 5V CC P =27dBm at 2.5% EVM, OUT V 6V CC On-Chip Output Power Detector Input Prematched to ~5 Proprietary Low Thermal Functional Block Diagram Resistance Package Hand Solderable and Easy Product Description Rework RFMDs RFPA2226 is a high linearity single stage class AB Heterojunction Bipolar Power Up/Down control <1s Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encap- sulated package. This HBT amplifier is made with InGaP on GaAs device technology Applications and fabricated with MOCVD for an ideal combination of low cost and high reliability. 802.16 WiMAX Driver or Output This product is specifically designed as a flexible final or driver stage for 802.16 Stage and 802.11 equipment in the 2.2GHz to 2.7GHz bands. It can run from a 3V to 6V supply. It is prematched to ~50 on the input for broadband performance and ease 2.4GHz 802.11 WiFi and ISM of matching at the board level. It features an output power detector, on/off power Applications control, ESD protection, excellent overall robustness and a proprietary hand rework- able and thermally enhanced QFN package. This product features a RoHS Compli- ant and Green package with matte tin finish. Ordering Information RFPA2226SQ Standard 25-piece bag RFPA2226SR Standard 100-piece reel RFPA2226 Standard 1000-piece reel RFPA2226-EVB1 Evaluation Board 2.4GHz to 2.5GHz Tune RFPA2226-EVB2 Evaluation Board 2.5GHz to 2.7GHz Tune Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS121010 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 17RFPA2226 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum VC1 Collector Bias Current (I)1500 mA VC1 Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- **Device Voltage (V)7.0 V D tions is not implied. Power Dissipation 6 W The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No *Max RF output Power for 50 30 dBm license is granted by implication or otherwise under any patent or patent rights of continuous long term RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. operation Max RF Input Power for 50W 28 dBm RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric output load materials and red phosphorus as a flame retardant, and <2% antimony in solder. Max RF Input Power for 10:1 VSWR 23 dBm output load Junction Temp (T)+150 C J Operating Lead Temperature (T )-40 to +85 C L Storage Temperature Range -40 to +150 C ESD Rating - Human Body Model 1000 V *Note: With specified application circuit **Note: No RF Drive Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , D D J L TH j-l Specification Parameter Unit Condition Min. Typ. Max. Frequency of Operation, 2200 2700 MHz Output Power at 1dB Compression 31.5 33.0 dBm 2.7GHz Small Signal Gain 11.3 12.8 dB 2.7GHz EVM 2.5 % 2.7GHz, 802.11g 54Mb/s at P =26dBm OUT Third Order Suppression -45.0 -42.0 dBc 2.7GHz, P =23dBm per tone OUT Noise Figure 4.3 dB 2.7GHz Worst Case Input Return Loss 8.0 12.0 dB 2.5GHz to 2.7GHz Worst Case Output Return Loss 8.0 12.0 dB 2.5GHz to 2.7GHz Power Detector Range 0.75 2.2 V P =10dBm to 30dBm OUT Quiescent Current 395 445 495 mA V =5V CC Power Up Control Current 2.1 mA V =5V PC VCC Leakage Current 10 AV =5V, V =0V CC PC Thermal Resistance 12.0 C/W junction - lead Test Conditions: Z =50 , V =5V, I =445mA, T =30C 0 CC Q BP 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 17 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. DS121010